锆酸铅-锡酸钛酸铅固溶体系中反铁电-铁电相开关薄膜

C. J. Gaskey, K. Udayakumar, H.D. Chen, L. Cross
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引用次数: 4

摘要

采用溶胶-凝胶、旋涂法制备了少量添加铌和镧的锆锡钛酸铅(PSZT)薄膜。以P-E环的平方度、最大极化和场致应变为标准,评价了反铁电四方和正交组合物在集成器件中储能和转换应用的性能。铌和镧掺杂体系的正交组成均表现出方回线迟滞行为,具有较大的可切换极化(30-40 /spl mu/C/cm/sup 2/),并且在铌掺杂体系中测量到0.33%的场致应变,因此两种体系都具有实际应用的可能性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Antiferroelectric to ferroelectric phase switching thin films in the lead zirconate stannate titanate solid solution system
Thin films of lead zirconate stannate titanate (PSZT) with slight additions of niobium and lanthanum have been prepared by the sol-gel, spin coat process. Antiferroelectric tetragonal and orthorhombic compositions have been evaluated on the criteria of P-E loop squareness, maximum polarization and field induced strain for the applications of energy storage and conversion in integrated devices. The orthorhombic compositions in both the niobium and lanthanum doped systems have shown square loop hysteretic behavior with large switchable polarizations (30-40 /spl mu/C/cm/sup 2/), and field-induced strains of 0.33% have been measured in the niobium doped system, thus both systems provide attractive possibilities for practical use.
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