热处理后不同表面处理的铟连接界面微观结构演变

Chengyong Chen, Liang-Yih Hung, Yueh Yang Lee, Yu-Po Wang
{"title":"热处理后不同表面处理的铟连接界面微观结构演变","authors":"Chengyong Chen, Liang-Yih Hung, Yueh Yang Lee, Yu-Po Wang","doi":"10.1109/IMPACT56280.2022.9966633","DOIUrl":null,"url":null,"abstract":"High performance computing (HPC) products market is growing to meet current and future demands in business, government, engineering, and science. HPC system can process big data and perform complex calculation at high speeds, where the system also generates a lot of heat continuously. The accumulated heat needs to be managed to avoid affecting the performance and lifetime of HPC system. Therefore, a key design and development of HPC products is to achieve high thermal dissipation in electronic devices. The application of thermal interface materials (TIMs) has been a promising thermal dissipation solution for electronic devices. However, the thermal conductivities of current silicone-based TIMs have been insufficient for future products. Indium is a potential candidate for high heat dissipation needs, because the thermal conductivity of pure indium is around 86 W/mK, which is higher than most silicone-based TIMs. When indium has been applied as a metallic TIM and jointed with the metal of surface finish, there is an intermetallic compound (IMC) reaction at the interface of indium joint. The phase and microstructure of IMC depend on the conditions of thermal treatments and the type of surface finish. The interfacial condition of indium joint is the key to heat dissipation performance. Therefore, the interfacial mechanism of indium joints have been investigated by applying different surface finishes and various heat treatments in this study.In this paper, the interfacial reactions of indium jointed with different surface finishes (Au/Ni(V) and Au/Ni) have been investigated, respectively. For studying the interfacial microstructure evolution of the indium joints, they have been treated with different thermal treatments, including reflow process (with 245°C peak temperature) and high temperature storage tests (aging at 100°C, 125°C, and 150°C for 250~1000 hours). The interfacial morphologies of indium joint and the growth behaviors of IMC have been observed, and the interfacial IMC has been identified as Ni28 In72 phase. For Au/Ni(V) surface finish, there is rock shaped IMC grains on the surface of Ni(V) layer, and the grain size of IMC increases with the increase of the reflow cycle. In Ni(V) layer, there is a significant In/Ni inter-diffusion reaction after different thermal treatments. For Au/Ni surface finish, the thickness of IMC increases with the increase of aging time and temperature, and the growth rate of IMC increases with the elevating storage temperature.","PeriodicalId":13517,"journal":{"name":"Impact","volume":"18 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Interfacial Microstructure Evolution of Indium Jointed with Different Surface Finishes after Thermal Treatments\",\"authors\":\"Chengyong Chen, Liang-Yih Hung, Yueh Yang Lee, Yu-Po Wang\",\"doi\":\"10.1109/IMPACT56280.2022.9966633\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High performance computing (HPC) products market is growing to meet current and future demands in business, government, engineering, and science. HPC system can process big data and perform complex calculation at high speeds, where the system also generates a lot of heat continuously. The accumulated heat needs to be managed to avoid affecting the performance and lifetime of HPC system. Therefore, a key design and development of HPC products is to achieve high thermal dissipation in electronic devices. The application of thermal interface materials (TIMs) has been a promising thermal dissipation solution for electronic devices. However, the thermal conductivities of current silicone-based TIMs have been insufficient for future products. Indium is a potential candidate for high heat dissipation needs, because the thermal conductivity of pure indium is around 86 W/mK, which is higher than most silicone-based TIMs. When indium has been applied as a metallic TIM and jointed with the metal of surface finish, there is an intermetallic compound (IMC) reaction at the interface of indium joint. The phase and microstructure of IMC depend on the conditions of thermal treatments and the type of surface finish. The interfacial condition of indium joint is the key to heat dissipation performance. Therefore, the interfacial mechanism of indium joints have been investigated by applying different surface finishes and various heat treatments in this study.In this paper, the interfacial reactions of indium jointed with different surface finishes (Au/Ni(V) and Au/Ni) have been investigated, respectively. For studying the interfacial microstructure evolution of the indium joints, they have been treated with different thermal treatments, including reflow process (with 245°C peak temperature) and high temperature storage tests (aging at 100°C, 125°C, and 150°C for 250~1000 hours). The interfacial morphologies of indium joint and the growth behaviors of IMC have been observed, and the interfacial IMC has been identified as Ni28 In72 phase. For Au/Ni(V) surface finish, there is rock shaped IMC grains on the surface of Ni(V) layer, and the grain size of IMC increases with the increase of the reflow cycle. In Ni(V) layer, there is a significant In/Ni inter-diffusion reaction after different thermal treatments. For Au/Ni surface finish, the thickness of IMC increases with the increase of aging time and temperature, and the growth rate of IMC increases with the elevating storage temperature.\",\"PeriodicalId\":13517,\"journal\":{\"name\":\"Impact\",\"volume\":\"18 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-10-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Impact\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMPACT56280.2022.9966633\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Impact","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMPACT56280.2022.9966633","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

高性能计算(HPC)产品市场正在不断增长,以满足当前和未来在商业、政府、工程和科学方面的需求。高性能计算系统可以高速处理大数据和执行复杂的计算,同时系统也会持续产生大量的热量。需要对积累的热量进行管理,以避免影响高性能计算系统的性能和使用寿命。因此,高性能计算产品的设计和开发的关键是在电子器件中实现高散热。热界面材料(TIMs)的应用是一种很有前途的电子器件散热解决方案。然而,目前硅基TIMs的热导率对于未来的产品来说是不够的。铟是高散热需求的潜在候选者,因为纯铟的导热系数约为86 W/mK,高于大多数硅基TIMs。当铟作为金属TIM与表面处理金属连接时,在铟连接界面处会发生金属间化合物(IMC)反应。IMC的相和显微组织取决于热处理条件和表面处理类型。铟接头的界面状态是影响其散热性能的关键。因此,本研究通过不同的表面处理和不同的热处理来研究铟接头的界面机理。本文分别研究了不同表面处理剂(Au/Ni(V)和Au/Ni)与铟的界面反应。为了研究铟接头的界面组织演变,对其进行了不同的热处理,包括回流工艺(峰值温度为245℃)和高温储存试验(在100℃、125℃和150℃时效250~1000小时)。通过对界面形貌和IMC生长行为的观察,确定界面IMC为Ni28 In72相。对于Au/Ni(V)表面光洁度,Ni(V)层表面存在岩石形状的IMC晶粒,且IMC晶粒尺寸随回流循环次数的增加而增大。在Ni(V)层中,经过不同热处理后,存在明显的In/Ni扩散反应。对于Au/Ni表面光洁度,IMC的厚度随时效时间和温度的增加而增加,IMC的生长速率随储存温度的升高而增加。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Interfacial Microstructure Evolution of Indium Jointed with Different Surface Finishes after Thermal Treatments
High performance computing (HPC) products market is growing to meet current and future demands in business, government, engineering, and science. HPC system can process big data and perform complex calculation at high speeds, where the system also generates a lot of heat continuously. The accumulated heat needs to be managed to avoid affecting the performance and lifetime of HPC system. Therefore, a key design and development of HPC products is to achieve high thermal dissipation in electronic devices. The application of thermal interface materials (TIMs) has been a promising thermal dissipation solution for electronic devices. However, the thermal conductivities of current silicone-based TIMs have been insufficient for future products. Indium is a potential candidate for high heat dissipation needs, because the thermal conductivity of pure indium is around 86 W/mK, which is higher than most silicone-based TIMs. When indium has been applied as a metallic TIM and jointed with the metal of surface finish, there is an intermetallic compound (IMC) reaction at the interface of indium joint. The phase and microstructure of IMC depend on the conditions of thermal treatments and the type of surface finish. The interfacial condition of indium joint is the key to heat dissipation performance. Therefore, the interfacial mechanism of indium joints have been investigated by applying different surface finishes and various heat treatments in this study.In this paper, the interfacial reactions of indium jointed with different surface finishes (Au/Ni(V) and Au/Ni) have been investigated, respectively. For studying the interfacial microstructure evolution of the indium joints, they have been treated with different thermal treatments, including reflow process (with 245°C peak temperature) and high temperature storage tests (aging at 100°C, 125°C, and 150°C for 250~1000 hours). The interfacial morphologies of indium joint and the growth behaviors of IMC have been observed, and the interfacial IMC has been identified as Ni28 In72 phase. For Au/Ni(V) surface finish, there is rock shaped IMC grains on the surface of Ni(V) layer, and the grain size of IMC increases with the increase of the reflow cycle. In Ni(V) layer, there is a significant In/Ni inter-diffusion reaction after different thermal treatments. For Au/Ni surface finish, the thickness of IMC increases with the increase of aging time and temperature, and the growth rate of IMC increases with the elevating storage temperature.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信