加速统计模拟通过按需埃尔米特样条插值

R. Kanj, Tong Li, R. Joshi, K. Agarwal, A. Sadigh, David W. Winston, S. Nassif
{"title":"加速统计模拟通过按需埃尔米特样条插值","authors":"R. Kanj, Tong Li, R. Joshi, K. Agarwal, A. Sadigh, David W. Winston, S. Nassif","doi":"10.1109/ICCAD.2011.6105354","DOIUrl":null,"url":null,"abstract":"We propose an efficient Hermite spline-based SPICE simulation methodology for accurate statistical yield analysis. Unlike conventional methods, the spline-based transistor tables are built on-demand specific to the transient simulation requirements of the statistical experiments. Compared with traditional MOSFET table models, on-demand spline table models use ∼500X less memory. This makes Hermite spline-based table models practical for use in simulations for process variation modeling. Furthermore, we propose an efficient gate voltage offset approach to model transistor threshold voltage variation. In this scenario, evaluations of the transistor model rely on a single reference table and require one set of spline function evaluations per VT sample point as opposed to two or more sets for VT interpolation. This method is comprehensive and the results are in excellent agreement with traditional BSIM-based simulations. Around 4X improvement in speed, which includes the table generation cost, could be further improved by employing other fast-SPICE techniques or parallelism. To the best of our knowledge, this is the first time such a methodology has been coupled with importance sampling techniques to study the yield of memory designs.","PeriodicalId":6357,"journal":{"name":"2011 IEEE/ACM International Conference on Computer-Aided Design (ICCAD)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Accelerated statistical simulation via on-demand Hermite spline interpolations\",\"authors\":\"R. Kanj, Tong Li, R. Joshi, K. Agarwal, A. Sadigh, David W. Winston, S. Nassif\",\"doi\":\"10.1109/ICCAD.2011.6105354\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We propose an efficient Hermite spline-based SPICE simulation methodology for accurate statistical yield analysis. Unlike conventional methods, the spline-based transistor tables are built on-demand specific to the transient simulation requirements of the statistical experiments. Compared with traditional MOSFET table models, on-demand spline table models use ∼500X less memory. This makes Hermite spline-based table models practical for use in simulations for process variation modeling. Furthermore, we propose an efficient gate voltage offset approach to model transistor threshold voltage variation. In this scenario, evaluations of the transistor model rely on a single reference table and require one set of spline function evaluations per VT sample point as opposed to two or more sets for VT interpolation. This method is comprehensive and the results are in excellent agreement with traditional BSIM-based simulations. Around 4X improvement in speed, which includes the table generation cost, could be further improved by employing other fast-SPICE techniques or parallelism. To the best of our knowledge, this is the first time such a methodology has been coupled with importance sampling techniques to study the yield of memory designs.\",\"PeriodicalId\":6357,\"journal\":{\"name\":\"2011 IEEE/ACM International Conference on Computer-Aided Design (ICCAD)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE/ACM International Conference on Computer-Aided Design (ICCAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCAD.2011.6105354\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE/ACM International Conference on Computer-Aided Design (ICCAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCAD.2011.6105354","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

摘要

我们提出了一种有效的基于Hermite样条的SPICE模拟方法,用于准确的产量统计分析。与传统方法不同,基于样条的晶体管表是根据统计实验的瞬态仿真要求按需构建的。与传统的MOSFET表模型相比,按需样条表模型使用的内存减少了~ 500X。这使得基于Hermite样条的表模型可用于过程变化建模的仿真。此外,我们提出了一种有效的栅极电压偏移方法来模拟晶体管阈值电压的变化。在这种情况下,晶体管模型的评估依赖于单个参考表,并且每个VT采样点需要一组样条函数评估,而VT插值则需要两组或更多组。该方法是全面的,结果与传统的基于bsim的仿真结果非常吻合。大约4倍的速度提高,包括表生成成本,可以通过采用其他快速spice技术或并行性进一步提高。据我们所知,这是第一次将这种方法与重要抽样技术结合起来研究存储器设计的产量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Accelerated statistical simulation via on-demand Hermite spline interpolations
We propose an efficient Hermite spline-based SPICE simulation methodology for accurate statistical yield analysis. Unlike conventional methods, the spline-based transistor tables are built on-demand specific to the transient simulation requirements of the statistical experiments. Compared with traditional MOSFET table models, on-demand spline table models use ∼500X less memory. This makes Hermite spline-based table models practical for use in simulations for process variation modeling. Furthermore, we propose an efficient gate voltage offset approach to model transistor threshold voltage variation. In this scenario, evaluations of the transistor model rely on a single reference table and require one set of spline function evaluations per VT sample point as opposed to two or more sets for VT interpolation. This method is comprehensive and the results are in excellent agreement with traditional BSIM-based simulations. Around 4X improvement in speed, which includes the table generation cost, could be further improved by employing other fast-SPICE techniques or parallelism. To the best of our knowledge, this is the first time such a methodology has been coupled with importance sampling techniques to study the yield of memory designs.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信