安全芯片里程表使用故意控制老化

N. E. C. Akkaya, B. Erbagci, K. Mai
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引用次数: 6

摘要

电子产品假冒是电子产品制造商、系统集成商和最终客户面临的一个日益严重的问题。假冒电子产品在制造业供应链中的普遍存在,引起了国防和民用部门的重大安全问题。威胁范围从相对简单的IC评论,以便以更高的价格出售零件或从废弃设备中回收零件,到批发逆向工程/复制设计和制造克隆IC和系统。为了打击IC伪造,我们提出了安全芯片里程表,为IC提供安全的使用/使用年限和来源认证,以实现简单,安全,可靠的正品和假冒部件区分。安全的芯片里程表有链接的二进制老化元件(BAE)来测量芯片的使用和年龄。在我们提出的设计中,使用热载流子注入(HCI)来测量年龄/使用的BAEs被设计并在65纳米体CMOS工艺中成型。为了进行表征,带出芯片具有500个模块化BAEs阵列和一个具有16个模块化BAEs的自老化系统。模块化的设计为不同的应力电流和电流密度值提供了693种可能的组合。测试芯片尺寸为1.2mm × 1.7mm,共78个衬垫,每个模块化BAE的面积为52.5μm2。它们可以在2.5V标称应力电压下承受40μA至1.3mA的电流。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Secure chip odometers using intentional controlled aging
Electronics counterfeiting is a significant and growing problem for electronics manufacturers, system integrators, and end customers. The widespread prevalence of counterfeit electronics in the manufacturing supply chain raises significant security concerns in both the defense and civilian sectors. The threat ranges from relatively simple IC remarking, in order to sell parts at a higher price or to recycle parts from discarded equipment, to wholesale reverse-engineering/copying of designs and manufacturing of cloned ICs and systems. To combat IC counterfeiting, we propose secure chip odometers to provide ICs with both a secure gauge of use/age and an authentication of provenance to enable simple, secure, robust differentiation between genuine and counterfeit parts. The secure chip odometers have chained binary aging elements (BAE) to measure use and age of the chip. In our proposed design, BAEs that use hot carrier injection (HCI) to measure age/use are designed and taped-out in a 65 nm bulk CMOS process. For characterization purposes, the taped-out chips have an array of 500 modular BAEs and a self-aging system with 16 modular BAEs. The modularity of the design provides 693 possible combinations for different stress current and current density values. The test chip dimensions are 1.2mm by 1.7mm with 78 pads, and each modular BAE has an area of 52.5μm2. They can be stressed with currents ranging from 40μA to 1.3mA at the 2.5V nominal stress voltage.
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