单片三维集成电路的热建模

Baoli Peng, V. Pavlidis, Yuanqing Cheng
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引用次数: 0

摘要

由于顺序过程,与基于TSV的集成相比,单片3D集成可以接近超高的器件密度。因此,它可以有效地维持摩尔定律,而无需诉诸于昂贵的技术萎缩。然而,M3D集成电路的散热问题是一个很大的挑战,并且由于邻近层之间的紧密热耦合,与基于TSV的同类产品不同,这需要进一步研究。在这项工作中,我们通过基于有限元法的热模型,比较了45纳米工艺节点下M3D集成电路与2D集成电路的热特性。实验结果表明,M3D集成电路的平均温度和最高温度较高。我们期望这项工作能够在M3D集成电路的热建模和热感知物理设计方面引起更多的研究兴趣。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thermal Modeling of Monolithic 3D ICs
Monolithic 3D integration can approach ultra-high device density compared to TSV -based integration owing to the sequential process. So it can effectively sustain Moore's law without resorting to costly technology shrinking. Nevertheless, heat dissipation problem in M3D ICs poses a big challenge, and is different from TSV -based counterparts due to close thermal coupling between neighboring tiers, which requires further investigations. In this work, we compare the thermal characteristics of M3D ICs to those of 2D ICs in 45nm technology node with a thermal model based on the finite element method. Experimental results show that the average and maximum temperature of M3D ICs is higher. We expect this work can invoke more research interests in thermal modeling and thermal aware physical design of M3D ICs.
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