γ辐照对砷化镓HBT的影响

2011 IEEE International Conference of Electron Devices and Solid-State Circuits Pub Date : 2011-12-29 DOI:10.1109/EDSSC.2011.6117663

Yang Shi, Lü Hong-Liang, Zhang Yu-ming, Zhang Yi-men, Zhang Jin-Can, Zhang Hai-Peng

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引用次数: 2

摘要

报道了伽马辐照对砷化镓(GaAs)异质结双极晶体管(HBT)的影响。研究了高达7mrad (Si)的伽马剂量下的直流和射频(RF)性能。经过7Mrad(Si) γ辐照后，观察到基极电流(lb)增加，这种变化被认为主要是由于n型发射极中有效少数载流子寿命(τ)的减少。此外，由于基极和集电极-基极空间电荷区电子迁移率(µn)降低，导致截止频率(fT)降低。

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The effects of gamma irradiation on GaAs HBT

The effects of gamma irradiation on Gallium-Arsenide (GaAs) Heterojunction Bipolar Transistor (HBT) is reported. DC and Radio Frequency (RF) performance are investigated for gamma doses up to 7 Mrad(Si). After 7Mrad(Si) gamma irradiation, an increase of base current (lb) is observed, the change is thought to be mainly due to the reduction of the effective minority carrier lifetime (τ) in the n-type emitter. Besides, the cutoff frequency (fT) decreases, which is caused by the decrease of the electron mobility (µn) in the base and the collector-base space charge region.

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2011 IEEE International Conference of Electron Devices and Solid-State Circuits

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