反应离子刻蚀制备的半绝缘InP:Fe衬底激光平台周围的氢化物VPE再生

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147423

S. Lourdudoss, S. Nilsson, L. Backbom, T. Klinga, O. Kjebon, B. Holmberg

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引用次数: 0

摘要

描述了在掺锌p-InP衬底上生长的激光的反应蚀刻(RIE)垂直台面周围，利用氢化物气相外延(HVPE)再生SI-InP:Fe。激光性能测量表明，在20℃时，直流和脉冲功率饱和电流分别为300 mA和>600 mA，分别为阈值电流的20和>40倍。特征温度为63k。由此推断，将5.6 ω的实际串联电阻最小化，可以提高整体性能。再生长的SI-InP:Fe虽然与InP:Zn衬底相邻，但具有很强的阻流性。

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Semi-insulating InP:Fe regrowth by hydride VPE around P-InP substrate laser mesas fabricated by reactive ion etching

The regrowth of SI-InP:Fe by hydride vapor-phase epitaxy (HVPE) around reactive-ion-etched (RIE) vertical mesas of lasers grown on Zn-doped p-InP substrate is described. The laser performance measurements show that at 20 degrees C, the DC and pulsed power saturation currents are 300 mA and >600 mA, or 20 and >40 times the threshold current, respectively. The characteristic temperature is 63 K. It is inferred that the overall performance can be improved by minimizing the actual series resistance of 5.6 Omega . The regrown SI-InP:Fe is highly current blocking despite its adjacency to InP:Zn substrate.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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