一种宽带10ghz的Si/SiGe HBT跟踪保持技术

Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044) Pub Date : 2000-05-21 DOI:10.1109/CICC.2000.852658

J. Jensen, L. Larson

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引用次数: 66

摘要

本文提出了一种基于高速肖特基二极管桥式设计的用于次采样通信的跟踪保持放大器。该IC采用45 GHz BiCMOS Si/SiGe工艺，功耗约为550 mW，可容纳高达600 mV的输入电压。它的IIP3为25.7 dBm，输入带宽超过10 GHz。

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A broadband 10 GHz track-and-hold in Si/SiGe HBT technology

This paper presents a track-and-hold amplifier for sub-sampling communications applications based on a diode bridge design with high-speed Schottky diodes. Implemented in a 45 GHz BiCMOS Si/SiGe process, this IC consumes approximately 550 mW and can accommodate input voltages up to 600 mV. It has an IIP3 of 25.7 dBm with an input bandwidth in excess of 10 GHz.

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Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044)

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