温度和密度对电子比热的依赖性

A. Isihara, D.Y. Kojima
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引用次数: 13

摘要

电子流体的比热是根据一阶和二阶交换图和环图在低但非零温度和高密度条件下确定的。在较低的温度下,比热常数γ在2级或3级合金中增大。实验确定的比热有效质量应相应增大。对于非常小的rs,比热低于理想气体值。当rs = 2时,比热曲线与温度的直线偏差预计在2 K左右开始,在低温时增加。温度的依赖性以对数项表示。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The temperature and density dependences of the electronic specific heat

The specific heat of an electron fluid is determined for low but nonzero temperature and for high density based on the first- and second-order exchange graphs and the ring diagrams. The specific heat constant γ is found to increase at lower temperatures for rs of order 2 or 3. The specific-heat effective mass determined by experiments should increase accordingly. For very small rs the specific heat is below the ideal-gas value. For rs = 2, the deviation from a straight line of the specific-heat curve plotted against temperature is expected to start at around 2 K and increases at low temperatures. The temperature dependence is characterized by logarithmic terms.

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