全带系综蒙特卡罗模拟框架中最终态各向异性选择方法

M Hjelm , H.-E Nilsson
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引用次数: 5

摘要

本文讨论了在全波段集成蒙特卡罗(MC)仿真框架下选择散射后最终状态的不同算法。更快的计算机使得使用更精细的微观模型来模拟先进的半导体器件成为可能。微观细节,如能带结构,声子色散和k向量相关的变形势变得容易获得,这需要良好的算法来选择散射后的最终状态。该算法还应适用于带结构的数值表示。提出了一种基于抑制方法的最终状态选择算法,并与其他两种最终状态选择算法在效率和精度方面进行了研究和比较。当采用较慢的方法计算波函数重叠积分时,认为该抑制算法适用于各向异性散射机制。结果表明,声子散射过程具有短q和长q两个特征,与非极性光学谷间过程非常相似。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Methods for anisotropic selection of final states in the full band ensemble Monte Carlo simulation framework

In this paper we discuss different algorithms to select final states after scattering within the full band ensemble Monte Carlo (MC) simulation framework. Faster computers have made it possible to use more elaborated microscopic models for simulation of advanced semiconductor devices. Microscopic details like the band structures, the phonon dispersions and k-vector dependent deformation potentials are becoming accessible, which demand good algorithms for the selection of final states after scattering. The algorithm should also be adapted for a numerical representation of the band structure. Such an algorithm based on the rejection method is presented, which has been studied and compared in terms of efficiency and accuracy with two other algorithms for final state selection. The rejection algorithm is considered as suitable for anisotropic scattering mechanisms and when a relatively slow method is used for calculation of the wave-function overlap integral. It is shown that an accurate model of acoustic phonon scattering results in two characters of the process: one short-q process and one long-q process, very similar to a nonpolar optical intervalley process.

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