{"title":"抗蚀剂材料在亚7nm及以上的进展","authors":"Li Li, Xuan Liu, Shyam Pal","doi":"10.1109/CSTIC.2017.7919757","DOIUrl":null,"url":null,"abstract":"The rapid development in dense integrated circuits requires significant advancement in small scaling patterning technology. EUV technology is considered as a powerful solution for the sub-7 nm node pattering and beyond. The high performance resist development is required for the practical applications of the EUV patterning for high volume manufacturing. In the current work, the requirements for the development of next generation resist materials is reviewed and summarized to propose the design criterion for high performance photoresist materials.","PeriodicalId":6846,"journal":{"name":"2017 China Semiconductor Technology International Conference (CSTIC)","volume":"46 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2017-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Advancement in resist materials for sub-7 nm patterning and beyond\",\"authors\":\"Li Li, Xuan Liu, Shyam Pal\",\"doi\":\"10.1109/CSTIC.2017.7919757\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The rapid development in dense integrated circuits requires significant advancement in small scaling patterning technology. EUV technology is considered as a powerful solution for the sub-7 nm node pattering and beyond. The high performance resist development is required for the practical applications of the EUV patterning for high volume manufacturing. In the current work, the requirements for the development of next generation resist materials is reviewed and summarized to propose the design criterion for high performance photoresist materials.\",\"PeriodicalId\":6846,\"journal\":{\"name\":\"2017 China Semiconductor Technology International Conference (CSTIC)\",\"volume\":\"46 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 China Semiconductor Technology International Conference (CSTIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSTIC.2017.7919757\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC.2017.7919757","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Advancement in resist materials for sub-7 nm patterning and beyond
The rapid development in dense integrated circuits requires significant advancement in small scaling patterning technology. EUV technology is considered as a powerful solution for the sub-7 nm node pattering and beyond. The high performance resist development is required for the practical applications of the EUV patterning for high volume manufacturing. In the current work, the requirements for the development of next generation resist materials is reviewed and summarized to propose the design criterion for high performance photoresist materials.
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