光导和俘获层分离的InGaAs/InAlAs结构在1.5 μm激发下产生光导太赫兹

2011 International Conference on Infrared, Millimeter, and Terahertz Waves Pub Date : 2011-12-15 DOI:10.1109/IRMMW-THZ.2011.6104831

R. Dietz, M. Gerhard, J. Boettcher, H. Kuenzel, M. Koch, B. Sartorius, M. Schell

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引用次数: 0

摘要

我们提出了基于MBE生长的InGaAs/InAlAs多纳米层结构的光导开关的第一个结果，该结构具有分离的捕获层和光导层，后者具有高载流子迁移率。高迁移率显著提高了光功率到太赫兹的转换效率，而发射的太赫兹带宽超过3太赫兹。

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Photoconductive THz generation at 1.5 μm excitation in InGaAs/InAlAs structures with separated photoconductive and trapping layers

We present first results on photoconductive switches based on MBE grown InGaAs/InAlAs multi-nanolayer structures with separated trapping and photoconductive layers, the later exhibiting high carrier mobility. The high mobility significantly increases the optical power-to-THz conversion efficiency, while the emitted THz bandwidth exceeds 3 THz.

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2011 International Conference on Infrared, Millimeter, and Terahertz Waves

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