GaAs共掺杂h钝化低屈曲和高屈曲之字形硅纳米带双探针器件的输运特性

IF 0.8 Q4 NANOSCIENCE & NANOTECHNOLOGY
Asma N. Naqash, Khurshed A. Shah, J. A. Sheikh, B. Kumbhani, Syed Muzaffar, Ali Andrabi
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引用次数: 0

摘要

在这项研究中,我们研究了低屈曲(LB)和高屈曲led (HB)基于硅烯的两个探针器件的输运特性,如I-V特性、电导、透射谱和投射器件的态密度。首先,我们通过氢钝化在LB和HB之字形硅纳米带(ZSiNR)上打开带隙,并模拟了它们的输运性质。此外,我们通过镓(Ga)和砷(As)原子掺杂LB和HB ZSiNR结构,以确定它们的输运性质的变化。结果表明:LB-ZSiNR和HB-ZSiNR的最大带隙分别为2.76和2.72˚a;与掺杂4原子和6原子的ZSiNR相比,掺杂2原子的ZSiNR在0.5 ~ 1.5 V电压范围内表现出良好的输运特性。通过计算传输谱和投影器件态密度对所得结果进行了验证。人们相信,这种模型设备将在电子工业中找到许多未来的应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Transport properties of GaAs Co-doped H-passivated low-buckled and high-buckled zigzag silicene nanoribbon two probe devices
A BSTRACT In this study, we have investigated the transport properties of low bucked (LB) and high buck-led (HB) silicene based two probe devices such as I–V characteristics, conductance, transmission spectrum and projected device density of states. Firstly, we have opened a bandgap in both LB and HB zigzag silicene nanoribbon (ZSiNR) by hydrogen passivation and simulated for their transport properties. Further, we have doped the LB and HB ZSiNR structures by gallium (Ga) and arsenide (As) atoms in order to determine their changes in the transport properties. The results show that 4 atom width silicene nanoribbon shows a maximum band gap of 2.76 and 2.72 ˚A for LB-ZSiNR and HB-ZSiNR, respectively. The 2 atom doped ZSiNR shows good transport characteristics in the voltage range of 0.5 to 1.5 V in comparison with 4 and 6 atom doped models. The obtained results were validated by calculating the transmission spectrum and projected device density of states. It is believed that the modelled devices will find number of futuristic applications in the electronic industry.
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来源期刊
Nanosystems: Physics, Chemistry, Mathematics
Nanosystems: Physics, Chemistry, Mathematics NANOSCIENCE & NANOTECHNOLOGY-
CiteScore
1.80
自引率
11.10%
发文量
64
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