一种低时间复杂度的纳米电子横条缺陷容限算法

Bo Yuan, Bin Li
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引用次数: 13

摘要

新兴的纳米电子技术有望将传统集成电路扩展到CMOS之外。然而,纳米电子器件的自组装工艺导致了更高的缺陷密度。因此,迫切需要精心设计的缺陷容忍技术。本文提出了一种低时间复杂度的纳米电子横条应用无关缺陷容限算法。该算法通过混合两种最先进算法的关键思想来提高性能。与当前最佳算法相比,该算法提供了相似(90%以上)的无缺陷子横条尺寸,结果显示,在一组具有不同横条尺寸和缺陷密度的样本上,但时间复杂度从O(n3)降低到O(n2)。因此,由于基于单片结构,该算法更适合于可重构纳米电子横条的缺陷容限。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A low time complexity defect-tolerance algorithm for nanoelectronic crossbar
Emerging nanoelectronic technologies are expected to extend the conventional integrated circuits beyond CMOS. However, the bottom-up self-assembly fabrication process of nanoelectronic devices results in higher defect density. Thus, crafted defect-tolerance techniques are urgently needed. In this paper, we present a low time complexity algorithm for application-independent defect-tolerance of nanoelectronic crossbars. The algorithm improves the performance through mixing the key ideas from two state-of-the-art algorithms. The algorithm offers similar (above 90%) defect-free subcrossbar sizes compared to the current best algorithm as the results show over a set of samples with various crossbar sizes and defect densities, but the time complexity is reduced from O(n3) down to O(n2). Thus, our algorithm is more suitable for defect-tolerance of reconfigurable nanoelectronic crossbar due to the per-chip basis.
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