锗(Ge)纳米结构尺寸相关能带隙的测定

Adem Beriso
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引用次数: 2

摘要

能带隙对固体的性质是至关重要的。材料的大多数行为,如导电性、光学跃迁或电子跃迁,都取决于它。能带隙的任何变化都可能显著改变材料的物理和化学性质。当固体尺寸减小到纳米尺度时,能带隙发生变化。锗是一种半导体元素,在其体结构中存在间接能带隙。其能带隙在缩小到纳米尺度后由间接能带隙变为直接能带隙,这是材料具有许多新特性的原因。在本文中,我研究了锗纳米结构(以量子点为例)的能带隙与点尺寸的关系,研究结果与其他理论和研究结果一致。关键词:能隙;小说性质;大小;纳米尺度;出版日期:2019年5月31日
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Determination of Size-Dependent Energy Bandgap of Germanium (Ge) nanostructure
Energy band gap is fundamentally important for the properties of a solid. Most of a material’s behaviors, such as conductivity, optical transitions, or electronic transitions, depend on it. Any change of the energy band gap may significantly alter the material’s physical and chemical properties. Change of the energy band gap occurs when the size of a solid is reduced to the nanometer length scale. Germanium is a semiconductor element and it has indirect energy band gap when it is in its bulk structure. Its energy band gap changes from indirect gap to direct gap after its size reduced to the nanometer scale which is responsible to many novel properties of the material. In this research paper, I investigated dependence of energy band gap of germanium nanostructure (the case of quantum dot) on the size of the dot and the findings are in agreement with other theoretical and research results. Keywords: Energy gap; novel properties; size; nanometer scale; quantum dot DOI : 10.7176/APTA/77-01 Publication date :May 31 st 2019
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