{"title":"离子液体和离子凝胶顶栅MoS2场效应晶体管的比较","authors":"Guen Hyung Oh, Taewan Kim","doi":"10.5757/asct.2021.30.5.156","DOIUrl":null,"url":null,"abstract":"Polymer electrolytes and ionic liquids (ILs) have attracted significant interest in applications as gate dielectrics. In this study, we fabricated top-gated molybdenum disulfide (MoS2) thin-film transistors using IL and ion-gel (IG) gate dielectrics. Room-temperature Raman spectra measurements indicated a dominant peak spectral emission at 358 cm−1 (E1 2g) and 406.44 cm−1 (A1g) associated with bilayer MoS2 films. The fabricated thin-film field-effect transistors (FET) with IG gate dielectric exhibited band transport with a highest mobility of 0.5 cm2/V⋅s, and a poor ION/IOFF ratio of ~10. By contrast, the FET with IL gate dielectric exhibited a 3400 % improvement in terms of the mobility (17.9 cm2/V⋅s), and a 1000 % improvement of the ION/IOFF ratio (~100).","PeriodicalId":8223,"journal":{"name":"Applied Science and Convergence Technology","volume":null,"pages":null},"PeriodicalIF":1.2000,"publicationDate":"2021-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Comparison of Ionic Liquid and Ion-Gel Top-Gate MoS2 Field-Effect Transistors\",\"authors\":\"Guen Hyung Oh, Taewan Kim\",\"doi\":\"10.5757/asct.2021.30.5.156\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Polymer electrolytes and ionic liquids (ILs) have attracted significant interest in applications as gate dielectrics. In this study, we fabricated top-gated molybdenum disulfide (MoS2) thin-film transistors using IL and ion-gel (IG) gate dielectrics. Room-temperature Raman spectra measurements indicated a dominant peak spectral emission at 358 cm−1 (E1 2g) and 406.44 cm−1 (A1g) associated with bilayer MoS2 films. The fabricated thin-film field-effect transistors (FET) with IG gate dielectric exhibited band transport with a highest mobility of 0.5 cm2/V⋅s, and a poor ION/IOFF ratio of ~10. By contrast, the FET with IL gate dielectric exhibited a 3400 % improvement in terms of the mobility (17.9 cm2/V⋅s), and a 1000 % improvement of the ION/IOFF ratio (~100).\",\"PeriodicalId\":8223,\"journal\":{\"name\":\"Applied Science and Convergence Technology\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.2000,\"publicationDate\":\"2021-09-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Science and Convergence Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.5757/asct.2021.30.5.156\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Science and Convergence Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.5757/asct.2021.30.5.156","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Comparison of Ionic Liquid and Ion-Gel Top-Gate MoS2 Field-Effect Transistors
Polymer electrolytes and ionic liquids (ILs) have attracted significant interest in applications as gate dielectrics. In this study, we fabricated top-gated molybdenum disulfide (MoS2) thin-film transistors using IL and ion-gel (IG) gate dielectrics. Room-temperature Raman spectra measurements indicated a dominant peak spectral emission at 358 cm−1 (E1 2g) and 406.44 cm−1 (A1g) associated with bilayer MoS2 films. The fabricated thin-film field-effect transistors (FET) with IG gate dielectric exhibited band transport with a highest mobility of 0.5 cm2/V⋅s, and a poor ION/IOFF ratio of ~10. By contrast, the FET with IL gate dielectric exhibited a 3400 % improvement in terms of the mobility (17.9 cm2/V⋅s), and a 1000 % improvement of the ION/IOFF ratio (~100).
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