Wang Yunlong , Duan Kaiyue , Wang Kaikun , Dai Zhigang , Xue Zhihong
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引用次数: 5
摘要
分别采用火花等离子烧结(SPS)和热压(HP)制备了用于电子封装的层状ti包覆金刚石/Cu复合材料。通过扫描电镜(SEM)对其结构进行了表征，并对其导热系数(TC)和热膨胀系数(CTE)等热性能进行了分析。考虑TiC界面的影响，采用改进的Hasselman and Johnson (HJ)模型计算了446.66 W·(m·K)−1层状复合材料的理论TC，并用膨胀仪测定了CTE。结果表明，SPS样品的缺陷比HP样品少，界面结合对复合材料的TC有显著影响。给出了界面影响的示意图，随着碳化物层厚度的增加和孔隙的出现，碳化热系数降低。在这方面，应加工具有薄碳化物层且无孔隙的复合材料以获得高TC。
Structure and Thermal Properties of Layered Ti-clad Diamond/Cu Composites Prepared by SPS and HP
Layered Ti-clad diamond/Cu composites used in electronic packaging were prepared by spark plasma sintering (SPS) and hot pressing (HP) separately. The structure was determined by Scanning Electron Microscopy (SEM) and the thermal properties, including the thermal conductivity (TC) and the coefficient of thermal expansion (CTE) were analyzed. The theoretical TC of the layered composites 446.66 W·(m·K)−1 was calculated by the modified Hasselman and Johnson (HJ) model considering the influence of the TiC interface and the CTE was determined by dilatometer. The results show that the sample of SPS has fewer defects than that of HP and the interfacial bonding affects the TC of the composites significantly. A schematic graph of the interface influences is proposed and the TC decreases with the increase of carbide layer thickness and the appearance of pores. In this regard, the composites with a thin carbide layer and no pores should be processed to achieve a high TC.
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