H. Shin, Se-Kyung Oh, Min-Ho Kang, I. Han, H. Kwon, Sang-Uk Park, Byung-Seok Park, J. Bok, Ga-Won Lee, H. Lee
{"title":"纳米级CMOS技术中硼簇注入和硅化镍对超浅结结特性的改善","authors":"H. Shin, Se-Kyung Oh, Min-Ho Kang, I. Han, H. Kwon, Sang-Uk Park, Byung-Seok Park, J. Bok, Ga-Won Lee, H. Lee","doi":"10.1109/SNW.2010.5562561","DOIUrl":null,"url":null,"abstract":"In this study, thermal stability of Ni silicide on boron, BF2, and B18H22 implanted junctions is improved using Ni-Pd(5%) alloy target. The proposed Ni-Pd(5%)/TiN structure enabled the maintenance of low sheet resistance during the RTP and post silicidation annealing than conventional Ni/TiN structure. The improvement of Ni silicide properties is analyzed to be due to the formation of Pd2Si of which peaks were confirmed by XRD data, which indicates the reaction has substantially occurred during the RTP and post silicidation annealing. Moreover, it is also shown that the proposed Ni-Pd(5%)/TiN is efficient in reducing the reverse leakage current as well as improving the thermal stability of ultra shallow junction with B18H22 implantation.","PeriodicalId":6433,"journal":{"name":"2010 Silicon Nanoelectronics Workshop","volume":"67 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Improvement of junction characteristics of ultra shallow junction with boron-cluster implantation and Ni-silicide for nano-scale CMOS technology\",\"authors\":\"H. Shin, Se-Kyung Oh, Min-Ho Kang, I. Han, H. Kwon, Sang-Uk Park, Byung-Seok Park, J. Bok, Ga-Won Lee, H. Lee\",\"doi\":\"10.1109/SNW.2010.5562561\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, thermal stability of Ni silicide on boron, BF2, and B18H22 implanted junctions is improved using Ni-Pd(5%) alloy target. The proposed Ni-Pd(5%)/TiN structure enabled the maintenance of low sheet resistance during the RTP and post silicidation annealing than conventional Ni/TiN structure. The improvement of Ni silicide properties is analyzed to be due to the formation of Pd2Si of which peaks were confirmed by XRD data, which indicates the reaction has substantially occurred during the RTP and post silicidation annealing. Moreover, it is also shown that the proposed Ni-Pd(5%)/TiN is efficient in reducing the reverse leakage current as well as improving the thermal stability of ultra shallow junction with B18H22 implantation.\",\"PeriodicalId\":6433,\"journal\":{\"name\":\"2010 Silicon Nanoelectronics Workshop\",\"volume\":\"67 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 Silicon Nanoelectronics Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SNW.2010.5562561\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Silicon Nanoelectronics Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2010.5562561","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Improvement of junction characteristics of ultra shallow junction with boron-cluster implantation and Ni-silicide for nano-scale CMOS technology
In this study, thermal stability of Ni silicide on boron, BF2, and B18H22 implanted junctions is improved using Ni-Pd(5%) alloy target. The proposed Ni-Pd(5%)/TiN structure enabled the maintenance of low sheet resistance during the RTP and post silicidation annealing than conventional Ni/TiN structure. The improvement of Ni silicide properties is analyzed to be due to the formation of Pd2Si of which peaks were confirmed by XRD data, which indicates the reaction has substantially occurred during the RTP and post silicidation annealing. Moreover, it is also shown that the proposed Ni-Pd(5%)/TiN is efficient in reducing the reverse leakage current as well as improving the thermal stability of ultra shallow junction with B18H22 implantation.
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