S. Stamenković, V. Marković, A. Jovanović, M. Stankov
{"title":"氩气形成时间延迟的电压依赖模型","authors":"S. Stamenković, V. Marković, A. Jovanović, M. Stankov","doi":"10.2298/FUPCT1702081S","DOIUrl":null,"url":null,"abstract":"Measurements of the formative time delay t_f at different working voltages U in argon at low pressure are presented. The well-known decreasing voltage behavior of the formative time delay is theoretical described by different empirical and semiempirical models. In addition to introduced empirical models, some models from the literature are applied to elucidate experimentally obtained t_f(U) dependence. However, the models from the literature show a good agreement with the experimental data only at low overvoltages \\DeltaU (\\DeltaU=U-U_s where U_s is the static breakdown voltage). Therefore, empirical corrections are made based on data analysis, and good compatibility is achieved in a whole range of working voltages. HIGHLIGHTS Presentation of the formative time delay measurements at different working voltages in argon at low pressure Application of empirical and semi-empirical models for description of t_f(U) dependence Application of the t_f(U) models from the literature with and without empirical corrections","PeriodicalId":12248,"journal":{"name":"Facta Universitatis - Series: Physics, Chemistry and Technology","volume":"3 1","pages":"081-093"},"PeriodicalIF":0.0000,"publicationDate":"2017-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"VOLTAGE DEPENDENT MODELS OF THE FORMATIVE TIME DELAY IN ARGON\",\"authors\":\"S. Stamenković, V. Marković, A. Jovanović, M. Stankov\",\"doi\":\"10.2298/FUPCT1702081S\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Measurements of the formative time delay t_f at different working voltages U in argon at low pressure are presented. The well-known decreasing voltage behavior of the formative time delay is theoretical described by different empirical and semiempirical models. In addition to introduced empirical models, some models from the literature are applied to elucidate experimentally obtained t_f(U) dependence. However, the models from the literature show a good agreement with the experimental data only at low overvoltages \\\\DeltaU (\\\\DeltaU=U-U_s where U_s is the static breakdown voltage). Therefore, empirical corrections are made based on data analysis, and good compatibility is achieved in a whole range of working voltages. HIGHLIGHTS Presentation of the formative time delay measurements at different working voltages in argon at low pressure Application of empirical and semi-empirical models for description of t_f(U) dependence Application of the t_f(U) models from the literature with and without empirical corrections\",\"PeriodicalId\":12248,\"journal\":{\"name\":\"Facta Universitatis - Series: Physics, Chemistry and Technology\",\"volume\":\"3 1\",\"pages\":\"081-093\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Facta Universitatis - Series: Physics, Chemistry and Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.2298/FUPCT1702081S\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Facta Universitatis - Series: Physics, Chemistry and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.2298/FUPCT1702081S","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
VOLTAGE DEPENDENT MODELS OF THE FORMATIVE TIME DELAY IN ARGON
Measurements of the formative time delay t_f at different working voltages U in argon at low pressure are presented. The well-known decreasing voltage behavior of the formative time delay is theoretical described by different empirical and semiempirical models. In addition to introduced empirical models, some models from the literature are applied to elucidate experimentally obtained t_f(U) dependence. However, the models from the literature show a good agreement with the experimental data only at low overvoltages \DeltaU (\DeltaU=U-U_s where U_s is the static breakdown voltage). Therefore, empirical corrections are made based on data analysis, and good compatibility is achieved in a whole range of working voltages. HIGHLIGHTS Presentation of the formative time delay measurements at different working voltages in argon at low pressure Application of empirical and semi-empirical models for description of t_f(U) dependence Application of the t_f(U) models from the literature with and without empirical corrections