聚乙烯烯作为ITO空穴注入双层发光二极管的促进剂

Y.-H. Tak, S. Mang, A. Greiner, H. Bässler, S. Pfeiffer, H.-H. Hörhold
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引用次数: 7

摘要

由于聚-(2,5-乙烯基乙烯)(PTV)的低氧化电位,在氧化铟锡(ITO)/PTV界面上建立了空穴注入的欧姆接触。它在ITO/PTV/Al二极管中产生空间电荷限制传导。利用ITO/PTV触点的欧姆特性,可以增加多层有机发光二极管的空穴注入,而在多层有机发光二极管中,由于阳极的电场屏蔽,内部电荷积累将降低大多数载流子注入。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Polythienylenevinylene as promoter of hole injection from ITO into bilayer light emitting diodes

Due to the low oxidation potential of poly-(2,5-thienylenevinylene) (PTV) an ohmic contact for hole injection is established at an indium tin oxide (ITO)/PTV interface. It gives rise to space-charge-limited conduction in an ITO/PTV/Al diode. The ohmic nature of the ITO/PTV contact can be exploited to increase hole injection into multilayer organic light emitting diodes in which internal charge accumulation would otherwise lower majority carrier injection by virtue of electric field screening at the anode.

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