范德华异质结构中声子驱动的超快电荷转移

IF 2.6 Q2 MULTIDISCIPLINARY SCIENCES
Giuseppe Meneghini, S. Brem, E. Malic
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引用次数: 10

摘要

由垂直堆叠的过渡金属二硫族化合物(TMDs)构建的范德华异质结构具有丰富的能量景观,包括层间和谷间激子。最近的实验证明了TMD异质结构中的超快电荷转移。然而,电荷转移过程的性质仍然是难以捉摸的。基于微观和物质现实的激子理论,我们揭示了通过强杂化谷间激子的声子介导散射控制着发生在亚100fs时间尺度上的电荷转移过程。我们跟踪了光激发激子的时间、动量和能量分辨弛豫动力学,并确定了不同TMD双层中与温度和堆叠相关的电荷转移时间。所提供的见解在微观理解范德华异质结构中技术上重要的电荷转移过程方面迈出了重要的一步。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Ultrafast phonon‐driven charge transfer in van der Waals heterostructures

Ultrafast phonon‐driven charge transfer in van der Waals heterostructures
Van der Waals heterostructures built by vertically stacked transition metal dichalcogenides (TMDs) exhibit a rich energy landscape including interlayer and intervalley excitons. Recent experiments demonstrated an ultrafast charge transfer in TMD heterostructures. However, the nature of the charge transfer process has remained elusive. Based on a microscopic and material-realistic exciton theory, we reveal that phonon-mediated scattering via strongly hybridized intervalley excitons governs the charge transfer process that occurs on a sub-100fs timescale. We track the time-, momentum-, and energy-resolved relaxation dynamics of optically excited excitons and determine the temperature- and stacking-dependent charge transfer time for different TMD bilayers. The provided insights present a major step in microscopic understanding of the technologically important charge transfer process in van der Waals heterostructures.
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