{"title":"紫外光发射用AlGaN纳米线的分子束外延","authors":"S. Zhao, J. Lu, Y. Zhong","doi":"10.1109/NANO51122.2021.9514283","DOIUrl":null,"url":null,"abstract":"In this work, we discuss the molecular beam epitaxial growth of AlGaN nanowires on Si for ultraviolet light emitting. It is found that, although using a relatively low substrate temperature, AlGaN nanowires with different Al contents can still have a reasonably good optical quality. The reduced substrate temperature could favor the development of electrically injected ultraviolet light emitting devices.","PeriodicalId":6791,"journal":{"name":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","volume":"77 1","pages":"403-404"},"PeriodicalIF":0.0000,"publicationDate":"2021-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Molecular Beam Epitaxy of AlGaN Nanowires for Ultraviolet Light Emitting\",\"authors\":\"S. Zhao, J. Lu, Y. Zhong\",\"doi\":\"10.1109/NANO51122.2021.9514283\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we discuss the molecular beam epitaxial growth of AlGaN nanowires on Si for ultraviolet light emitting. It is found that, although using a relatively low substrate temperature, AlGaN nanowires with different Al contents can still have a reasonably good optical quality. The reduced substrate temperature could favor the development of electrically injected ultraviolet light emitting devices.\",\"PeriodicalId\":6791,\"journal\":{\"name\":\"2021 IEEE 21st International Conference on Nanotechnology (NANO)\",\"volume\":\"77 1\",\"pages\":\"403-404\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-07-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE 21st International Conference on Nanotechnology (NANO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NANO51122.2021.9514283\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 21st International Conference on Nanotechnology (NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO51122.2021.9514283","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Molecular Beam Epitaxy of AlGaN Nanowires for Ultraviolet Light Emitting
In this work, we discuss the molecular beam epitaxial growth of AlGaN nanowires on Si for ultraviolet light emitting. It is found that, although using a relatively low substrate temperature, AlGaN nanowires with different Al contents can still have a reasonably good optical quality. The reduced substrate temperature could favor the development of electrically injected ultraviolet light emitting devices.
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