Nd:YAG激光生长FeSe薄膜的直接arpes和STM研究

S. Chaluvadi, D. Mondal, C. Bigi, J. Fujii, R. Adhikari, R. Ciancio, A. Bonanni, G. Panaccione, G. Rossi, I. Vobornik, P. Orgiani
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引用次数: 3

摘要

超薄量子材料的研究需要完全控制样品的生长和表面质量,以便对其原子结构和电子状态进行实验,从而最终分析其内在性质。利用全原位超高真空(UHV)实验室的优势,利用扫描隧道显微镜(STM)、同步辐射x射线光电子能谱(XPS)和角度分辨光发射能谱(ARPES)在新鲜表面上进行直接高分辨率表面分析,我们报告了脉冲激光沉积(PLD)在CaF2(001)衬底上生长的外延FeSe薄膜的结果。通过优化靶到衬底的距离d和烧蚀频率对FeSe PLD生长方案进行了微调,获得了具有单位细胞阶跃高度的原子平坦梯级,克服了其他人经常观察到的螺旋形态。线偏振水平和垂直辐射的原位ARPES显示,在费米表面Γ和M点处存在类似空穴和电子的口袋,这与之前在切割单晶表面上的观测结果一致。通过原位PLD在含有Se等挥发性元素的量子材料生长中实现的控制使得原位ARPES和XPS可以解决表面的精细分析问题。该研究为基于PLD的异质结构作为理解邻近驱动效应和开发基于量子材料组合的潜在设备的工作台开辟了广阔的途径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Direct-ARPES and STM Investigation of FeSe Thin Film Growth by Nd:YAG Laser
Research on ultrathin quantum materials requires full control of the growth and surface quality of the specimens in order to perform experiments on their atomic structure and electron states leading to ultimate analysis of their intrinsic properties. We report results on epitaxial FeSe thin films grown by pulsed laser deposition (PLD) on CaF2 (001) substrates as obtained by exploiting the advantages of an all-in-situ ultra-high vacuum (UHV) laboratory allowing for direct high-resolution surface analysis by scanning tunnelling microscopy (STM), synchrotron radiation X-ray photoelectron spectroscopy (XPS) and angle-resolved photoemission spectroscopy (ARPES) on fresh surfaces. FeSe PLD growth protocols were fine-tuned by optimizing target-to-substrate distance d and ablation frequency, atomically flat terraces with unit-cell step heights are obtained, overcoming the spiral morphology often observed by others. In-situ ARPES with linearly polarized horizontal and vertical radiation shows hole-like and electron-like pockets at the Γ and M points of the Fermi surface, consistent with previous observations on cleaved single crystal surfaces. The control achieved in growing quantum materials with volatile elements such as Se by in-situ PLD makes it possible to address the fine analysis of the surfaces by in-situ ARPES and XPS. The study opens wide avenues for the PLD based heterostructures as work-bench for the understanding of proximity-driven effects and for the development of prospective devices based on combinations of quantum materials.
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