HfO2/Ge-HfO2/SiO2三层结构的电荷存储性能

2014 International Semiconductor Conference (CAS) Pub Date : 2014-10-01 DOI:10.1109/SMICND.2014.6966390

C. Palade, A. Slav, A. Lepadatu, V. Teodorescu, M. Ciurea

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引用次数: 2

摘要

本文报道了由溅射栅HfO2/共溅射Ge-HfO2层/快速热隧穿SiO2氧化物组成的三层结构的电荷存储性能。透射电镜和x射线衍射研究表明，在退火结构中形成了单斜和四方混合结构的HfO2。研究了Al/HfO2/Ge-HfO2/SiO2/Si/Al金属氧化物半导体电容器沉积和退火结构的电容-电压特性。在沉积结构中观察到较大的C-V滞后，这种滞后受氧化物和界面中存在的陷阱控制。退火产生C-V迟滞，由于在锗纳米晶体中注入电荷，存储器窗口较小。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Charge storage properties of HfO2/Ge-HfO2/SiO2 trilayer structures

We report on the charge storage properties of trilayer structures consisting in sputtered gate HfO2/co-sputtered Ge-HfO2 layer/rapid thermal tunneling SiO2 oxide. Investigations of transmission electron microscopy and X-ray diffraction evidence the formation of HfO2 with mixed structure of monoclinic and tetragonal in the annealed structures. Capacitance-voltage (C-V) characteristics were measured on Al/HfO2/Ge-HfO2/SiO2/Si/Al metal-oxide-semiconductor capacitors based on as-deposited and annealed structures. Large C-V hysteresis is observed for the as-deposited structures and is controlled by traps present in oxide and interface. The annealing yields a C-V hysteresis with smaller memory window being due to injected charges in Ge nanocrystals.

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2014 International Semiconductor Conference (CAS)

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