微波应用的4H-SiC PIN二极管

IF 0.1 0 THEATER
K. Zekentes, N. Camara, L. Romanov, A. Kirillov, M. S. Boltovets, A. Lebedev, K. Vassilevski
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引用次数: 10

摘要

以微波应用为目标,对4H-SiC p-i-n二极管进行了设计、制备和表征。结果表明,最优的二极管表面结构直径在80 ~ 150 /spl mu/m之间,阻塞电压为1100 V, 100 mA差分电阻为1 ~ 2 /spl ω /,击穿电压为100 V时电容低于0.5 pF,载流子有效寿命为15 ~ 27 ns。首次展示了基于4H-SiC p-i-n二极管的x波段微波开关。该开关的插入损耗低至0.7 dB,隔离度高达25 dB,在隔离模式和插入模式下的脉冲高微波功率分别为2.2 kW和0.4 kW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
4H-SiC PIN diodes for microwave applications
4H-SiC p-i-n diodes were designed, fabricated and characterized with the aim to be used for microwave applications. The best diodes with mesa structure diameters between 80 and 150 /spl mu/m, exhibited a blocking voltage of 1100 V, a 100 mA differential resistance of 1-2 /spl Omega/, a capacitance below 0.5 pF at punchthrough voltage of 100 V and carrier effective lifetime between 15-27 ns. X-band microwave switches based on 4H-SiC p-i-n diodes are demonstrated for the first time. The switches exhibited insertion losses as low as 0.7 dB, isolation up to 25 dB and operation in pulsed high microwave powers of 2.2 k W in isolation mode and 0.4 kW in insertion mode.
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Teatro e Storia
Teatro e Storia THEATER-
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