背光对InGaN / gan基结构电流电压特性的影响

Q4 Engineering
D. Y. Vostretsov, L. Vostretsova, T. S. Smirnova, D. P. Dmitriev
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Influence of backlighting on current-voltage characteristics of InGaN / GaN-based structures with back-shift
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来源期刊
CiteScore
0.60
自引率
0.00%
发文量
21
审稿时长
22 weeks
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