一种设计减/增和二补电路的新型并行技术

R. Hashemian, C. P. Chen
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引用次数: 16

摘要

提出了一种新的DIT电路的设计方法。该技术在硅面积消耗和时间方面都显示出高效率。更有趣的是,结果表明,操作延迟几乎与字长无关,因此该方法最适合用于高密度码。在结构上,电路由两条并行路径组成:一条用于输入数据,另一条用于通过数据路径生成用于DIT操作的控制信号。采用CMOS技术设计并仿真了64位字长的电路。对于最坏情况,报告的响应时间为14.7 ns。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A new parallel technique for design of decrement/increment and two's complement circuits
A novel design technique for the construction of a decrement/increment and two's complement (DIT) circuit is presented. The technique is shown to be highly efficient of both in terms silicon area consumption and time. More interestingly, it is shown that the operation delay is almost independent of the word size, and hence the method is best used for high-density codes. Structurally, the circuit is made of two parallel paths: one for the input data and one for the generation of the control signal to be utilized for DIT operation through the data path. The circuit is designed and simulated for 64-bit word length using CMOS technology. For the worst-case situation, a 14.7 ns response time is reported.<>
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