sic晶须增强Si亚3n亚4陶瓷形成的热力学计算

K. Nickel, M. Hoffmann, P. Greil, G. Petzow
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引用次数: 39

摘要

通过热力学平衡计算,确定了sic晶须增强Si{sub 3}N{sub 4}复合陶瓷的最佳制备条件。计算结果表明,在0.1 MPa的氮气气氛中,可以在高达2,123 K(1,850{°}C)的温度下进行无压烧结,而不会出现晶须或基体降解。此外,在温度高达2,373 K(2,100{度}C)的气体压力烧结需要1至10 MPa的氮气压力。在2273 K(2000{度}C)的温度下,热等静压(总压力{ge} 100 MPa)只有在与惰性气体混合的气体中氮气分压保持在1 ~ 10 MPa之间时,才能得到未降解的复合材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thermodynamic calculations for the formation of SiC-whisker-reinforced Si sub 3 N sub 4 ceramics
Thermodynamic equilibria were calculated to determine optimum fabrication conditions for SiC-whisker-reinforced Si{sub 3}N{sub 4} composite ceramics. Results of calculations indicate that pressureless sintering in a nitrogen atmosphere of 0.1 MPa may be performed at temperatures up to 2,123 K (1,850{degree}C) without whisker or matrix degradation. In addition, gas pressure sintering at temperatures up to 2,373 K (2,100{degree}C) requires a nitrogen pressure of 1 to 10 MPa. Hot isostatic pressing (total pressure {ge} 100 MPa) at 2,273 K (2,000{degree}C) can yield undegraded composite materials only when the nitrogen partial pressure in a gas mixture with an inert gas is kept between 1 to 10 MPa.
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