利用InP/sub x/O/sub y/薄膜增强势垒高度的InP肖特基二极管和mesfet

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147355

D. Kusumi, Y. Ohkubo, M. Ura, M. Ohmori

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引用次数: 0

摘要

采用P/sub 2/O/sub 5/蒸发和380℃下退火形成的InP/sub x/O/sub y/薄膜，提高了InP二极管和mesfet的肖特基势垒高度。通过优化成膜工艺，获得了厚度小于10nm的InPxO/ suby /薄膜。采用x射线光电子能谱(XPS)和俄歇电子能谱(AES)对膜和膜/InP界面进行了评价。最佳Au (1 mm phi)/InP/sub x/O/sub y//InP二极管的势垒高度高达0.95 eV，理想因数为1.2，在-10 V时的反向电流为100 pA。将Au-InP/sub x/O/sub y/-InP结构应用到MESFET中，在0.8 μ m栅极长度的FET中显示了106 mS/mm的跨导。

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InP Schottky diodes and MESFETs with enhanced barrier height using InP/sub x/O/sub y/ films

An InP/sub x/O/sub y/ film formed by P/sub 2/O/sub 5/ evaporation and annealing below 380 degrees C was applied to enhance the Schottky barrier height for InP diodes and MESFETs. Optimizing the film formation, an InPxO/sub y/ film of less than 10 nm in thickness has been obtained reproducibly. The film and the film/InP interface were evaluated by X-ray photoelectron spectroscopy (XPS) and Auger electron Spectroscopy (AES) analysis. The best Au (1 mm phi )/InP/sub x/O/sub y//InP diode showed barrier height as high as 0.95 eV, an ideality factor of 1.2, and a reverse current of 100 pA at -10 V. Applying the structure of Au-InP/sub x/O/sub y/-InP to the MESFET, a transconductance of 106 mS/mm in the 0.8 mu m gate length FET was demonstrated.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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