{"title":"压阻式压力传感器中AlTi/TiW、多晶硅和欧姆触点的可靠性研究","authors":"A. Andrei, C. Malhaire, S. Brida, D. Barbier","doi":"10.1109/ICSENS.2004.1426374","DOIUrl":null,"url":null,"abstract":"This paper presents a study on the thermal drift and long term stability of AlTi (with a TiW diffusion barrier) metal lines, polysilicon gauges and metal on polysilicon contact resistances for piezoresistive pressure sensors operating in harsh environments. Test structures have been exposed at 150/spl deg/C for a cumulated time of almost six months. All metal lines structures show a relative resistance decrease of around 4/spl times/10/sup -3/. On the other hand, polysilicon resistivity variations were not observable except for a few samples that showed a relative increase up to 7/spl times/10/sup -3/. Polysilicon contact resistance showed no particular trend with aging time. The impact of these results on the overall sensor reliability has also been discussed.","PeriodicalId":20476,"journal":{"name":"Proceedings of IEEE Sensors, 2004.","volume":"57 1","pages":"1125-1128 vol.3"},"PeriodicalIF":0.0000,"publicationDate":"2004-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Reliability study of AlTi/TiW, polysilicon and ohmic contacts for piezoresistive pressure sensors applications\",\"authors\":\"A. Andrei, C. Malhaire, S. Brida, D. Barbier\",\"doi\":\"10.1109/ICSENS.2004.1426374\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a study on the thermal drift and long term stability of AlTi (with a TiW diffusion barrier) metal lines, polysilicon gauges and metal on polysilicon contact resistances for piezoresistive pressure sensors operating in harsh environments. Test structures have been exposed at 150/spl deg/C for a cumulated time of almost six months. All metal lines structures show a relative resistance decrease of around 4/spl times/10/sup -3/. On the other hand, polysilicon resistivity variations were not observable except for a few samples that showed a relative increase up to 7/spl times/10/sup -3/. Polysilicon contact resistance showed no particular trend with aging time. The impact of these results on the overall sensor reliability has also been discussed.\",\"PeriodicalId\":20476,\"journal\":{\"name\":\"Proceedings of IEEE Sensors, 2004.\",\"volume\":\"57 1\",\"pages\":\"1125-1128 vol.3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE Sensors, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSENS.2004.1426374\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE Sensors, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSENS.2004.1426374","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Reliability study of AlTi/TiW, polysilicon and ohmic contacts for piezoresistive pressure sensors applications
This paper presents a study on the thermal drift and long term stability of AlTi (with a TiW diffusion barrier) metal lines, polysilicon gauges and metal on polysilicon contact resistances for piezoresistive pressure sensors operating in harsh environments. Test structures have been exposed at 150/spl deg/C for a cumulated time of almost six months. All metal lines structures show a relative resistance decrease of around 4/spl times/10/sup -3/. On the other hand, polysilicon resistivity variations were not observable except for a few samples that showed a relative increase up to 7/spl times/10/sup -3/. Polysilicon contact resistance showed no particular trend with aging time. The impact of these results on the overall sensor reliability has also been discussed.
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