in (OH)xSy缓冲层修饰太阳能电池复合对串联电阻的影响

Robinson Musembi, B. O. Aduda, J. Mwabora, M. Rusu, K. Fostiropoulos, M. Lux‐Steiner
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引用次数: 8

摘要

研究了TiO2/ in (OH)xSy/Pb(OH)xSy/PEDOT:PSS太阳能电池的输运机理。在200 K - 320 K的温度范围内,在黑暗和不同的照明强度下进行了表征。理想因子计算表明,在黑暗条件下,eta太阳能电池的复合过程隧穿增强,而在光照条件下,它是热激活的,并通过指数分布的能量复合水平进行。已经发现温度对太阳能电池的串联电阻有影响。串联电阻在低温时高,在高温时低,因此我们可以得出结论,复合是热作用的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of Recombination on Series Resistance in eta Solar Cell Modified with In(OH)xSy Buffer Layer
Transport mechanism studies in TiO2/In(OH)xSy/Pb(OH)xSy/PEDOT:PSS eta solar cell have been carried out. The characterizations have been performed both in the dark and under vary ing illu mination intensity for temperature range 200 K - 320 K. Calcu lations from ideality factor have shown that the recombination process of the eta solar cell in the dark to be tunneling enhanced, while under illu mination it is thermally activated and takes place through exponentially distributed energy recombination levels. The temperature has been found to influence series resistance of the solar cell. Series resistance has been found to be high at low temperature and low at higher temperature, thus we can conclude that the recombination is thermally act ivated.
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