一种适用于低压的自举CMOS电路技术

B. Kong, D. Kang, Young-Hyun Jun
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引用次数: 12

摘要

针对低电压、低功耗的应用,提出了新型的低电压CMOS逻辑家族,即自锁锁存CMOS逻辑(BLCL)和升压型自锁锁存CMOS逻辑(DB-BLCL)。这些电路通过使用单个自举电容器将内部节点提升到电源之外或低于地面,从而提高了在低电源电压区域驱动大容性负载的运行速度。它们通过消除自举节点的电荷损耗,提供比传统CMOS自举电路更大的自举电压。此外,DB-BLCL电路中的每个引导节点根据输入和输出值的需求进行升压,以最小化平均功耗,并且仅在输出过渡期间对驱动器进行瞬态过驱动,以提高器件的可靠性。这些电路采用0.35 /spl mu/m CMOS工艺技术设计。对比结果表明,与传统自举电路相比,BLCL的开关速度提高了15-30%,功耗相当。此外,DB-BLCL由于独特的按需自启动能力,获得了与BLCL相同的开关速度提升,功耗降低了33%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A bootstrapped CMOS circuit technique for low-voltage application
Novel low-voltage CMOS logic family, called bootstrapped latched CMOS logic (BLCL), and demand-on-boosting bootstrapped latched CMOS logic (DB-BLCL) are proposed for low-voltage and low-power applications. These circuits improve operation speed at low supply voltage region for driving a large capacitive load by boosting internal nodes beyond the power supply or below the ground using a single bootstrap capacitor. They provide larger bootstrap voltages than the conventional CMOS bootstrap circuit by eliminating charge loss from the bootstrap nodes. Moreover, each bootstrap node in DB-BLCL circuit is boosted on demand depending on the input and output values to minimize the average power consumption and the drivers are transiently overdriven during only the output transition period for device reliability. These circuits were designed using 0.35 /spl mu/m CMOS process technology. The comparison result indicates that BLCL provides switching speed improvements of 15-30% with comparable power consumption as compared to the conventional bootstrapped circuit. In addition, DB-BLCL obtains the same switching speed improvement as BLCL with 33% less power consumption due to unique demand-on bootstrapping capability.
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