孔隙率对蓝宝石上生长GaN特性的影响

A. Mahmood, Z. Hassan, F. Yam, L. S. Chuah
{"title":"孔隙率对蓝宝石上生长GaN特性的影响","authors":"A. Mahmood, Z. Hassan, F. Yam, L. S. Chuah","doi":"10.1063/1.3586952","DOIUrl":null,"url":null,"abstract":"The preparation of porous semiconductors has attracted a great deal of research interest in recent years, primarily due to the potential for intentional engineering of properties not readily obtained in the corresponding crystalline precursors as well as the potential applications in optoelectronics, chemical and biochemical sensing [1–4]. When porosity is formed, these materials exhibit various special optical features, for instance, the shift of bandgap [5], luminescence intensity enhancement [6], as well as photoresponse improvement [7]. To date, porous silicon (Si) receives enormous attention and has been investigated most intensively; however the instability of physical properties has prevented it from large scale applications [8]. Thus, this leads to the development of other porous semiconductors, for instance, the wide bandgap materials such as GaN [2].","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Effect of porosity on the characteristics of GaN grown on sapphire\",\"authors\":\"A. Mahmood, Z. Hassan, F. Yam, L. S. Chuah\",\"doi\":\"10.1063/1.3586952\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The preparation of porous semiconductors has attracted a great deal of research interest in recent years, primarily due to the potential for intentional engineering of properties not readily obtained in the corresponding crystalline precursors as well as the potential applications in optoelectronics, chemical and biochemical sensing [1–4]. When porosity is formed, these materials exhibit various special optical features, for instance, the shift of bandgap [5], luminescence intensity enhancement [6], as well as photoresponse improvement [7]. To date, porous silicon (Si) receives enormous attention and has been investigated most intensively; however the instability of physical properties has prevented it from large scale applications [8]. Thus, this leads to the development of other porous semiconductors, for instance, the wide bandgap materials such as GaN [2].\",\"PeriodicalId\":6354,\"journal\":{\"name\":\"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1063/1.3586952\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/1.3586952","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

摘要

近年来,多孔半导体的制备引起了大量的研究兴趣,主要是因为多孔半导体有可能对相应的晶体前体不易获得的特性进行有意的工程处理,以及在光电子、化学和生化传感方面的潜在应用[1-4]。当孔隙形成时,这些材料表现出各种特殊的光学特性,如带隙移位[5]、发光强度增强[6]、光响应改善[7]等。迄今为止,多孔硅(Si)受到了极大的关注,并得到了最深入的研究;然而,物理性质的不稳定性阻碍了它的大规模应用[8]。因此,这导致了其他多孔半导体的发展,例如,GaN等宽带隙材料[2]。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of porosity on the characteristics of GaN grown on sapphire
The preparation of porous semiconductors has attracted a great deal of research interest in recent years, primarily due to the potential for intentional engineering of properties not readily obtained in the corresponding crystalline precursors as well as the potential applications in optoelectronics, chemical and biochemical sensing [1–4]. When porosity is formed, these materials exhibit various special optical features, for instance, the shift of bandgap [5], luminescence intensity enhancement [6], as well as photoresponse improvement [7]. To date, porous silicon (Si) receives enormous attention and has been investigated most intensively; however the instability of physical properties has prevented it from large scale applications [8]. Thus, this leads to the development of other porous semiconductors, for instance, the wide bandgap materials such as GaN [2].
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