InP晶圆的光致发光寿命测量

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147455

G. Landis, P. Jenkins, I. Weinberg

{"title":"InP晶圆的光致发光寿命测量","authors":"G. Landis, P. Jenkins, I. Weinberg","doi":"10.1109/ICIPRM.1991.147455","DOIUrl":null,"url":null,"abstract":"An apparatus that measures the minority carrier lifetime in InP is described. The technique stimulates the sample with a short pulse of light from a diode laser and measures the photoluminescence (PL) decay to extract the minority carrier lifetime. The photoluminescence lifetime in InP as a function of doping on both n- and p-type material was examined. The results show a marked difference in the lifetime on n-type InP and p-type InP of similar doping levels. N-type InP shows a lifetime considerably longer than the expected radiative limited lifetime.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"7 1","pages":"636-639"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Photoluminescence lifetime measurements in InP wafers\",\"authors\":\"G. Landis, P. Jenkins, I. Weinberg\",\"doi\":\"10.1109/ICIPRM.1991.147455\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An apparatus that measures the minority carrier lifetime in InP is described. The technique stimulates the sample with a short pulse of light from a diode laser and measures the photoluminescence (PL) decay to extract the minority carrier lifetime. The photoluminescence lifetime in InP as a function of doping on both n- and p-type material was examined. The results show a marked difference in the lifetime on n-type InP and p-type InP of similar doping levels. N-type InP shows a lifetime considerably longer than the expected radiative limited lifetime.<<ETX>>\",\"PeriodicalId\":6444,\"journal\":{\"name\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"volume\":\"7 1\",\"pages\":\"636-639\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1991.147455\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147455","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

介绍了一种测量InP中少数载流子寿命的装置。该技术用二极管激光器的短脉冲光刺激样品，测量光致发光(PL)衰减，提取少数载流子寿命。研究了InP在n型和p型材料上掺杂的光致发光寿命。结果表明，相似掺杂水平的n型InP和p型InP的寿命有显著差异。n型InP的寿命明显长于预期的辐射极限寿命。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Photoluminescence lifetime measurements in InP wafers

An apparatus that measures the minority carrier lifetime in InP is described. The technique stimulates the sample with a short pulse of light from a diode laser and measures the photoluminescence (PL) decay to extract the minority carrier lifetime. The photoluminescence lifetime in InP as a function of doping on both n- and p-type material was examined. The results show a marked difference in the lifetime on n-type InP and p-type InP of similar doping levels. N-type InP shows a lifetime considerably longer than the expected radiative limited lifetime.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

自引率

0.00%

发文量