[CdCl4]−[C17H14O5S]+杂化材料的表面功能化和光带隙研究

Kuldeep Kumar, Ajit Kumar, Dinesh Jasrotia, S. Verma, P. A. Alvi
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摘要

采用慢冷却溶液生长法制备了氯化镉与酚红的无机-有机杂化材料。通过粉末XRD分析表明,该杂化材料生长在单斜空间群P21中,细胞参数为a = 6.231, b = 4.873, c = 3.412, b = 93.85。通过FESEM分析进行了表面功能化,描述了混合材料的晶粒尺寸为90 nm,材料的固体度= 0.98。通过紫外可见吸收光谱计算得到了3.09eV的直接带隙,表明该杂化材料具有潜在的带隙跃迁,可用于光能存储器件。采用慢冷却溶液生长法制备了氯化镉与酚红的无机-有机杂化材料。通过粉末XRD分析表明,该杂化材料生长在单斜空间群P21中,细胞参数为a = 6.231, b = 4.873, c = 3.412, b = 93.85。通过FESEM分析进行了表面功能化,描述了混合材料的晶粒尺寸为90 nm,材料的固体度= 0.98。通过紫外可见吸收光谱计算得到了3.09eV的直接带隙,表明该杂化材料具有潜在的带隙跃迁,可用于光能存储器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Surface functionality and optical band gap studies of [CdCl4]− [C17H14O5S]+ hybrid material
An inorganic-organic hybrid material of cadmium chloride and phenol red has been prepared by solution growth through slow cooling process. The hybrid material was studied through powder XRD pattern which shows that the material has been grown in monoclinic space group P21 with the cell parameters of a = 6.231, b = 4.873, c = 3.412 and b = 93.85o. The surface functionality has been performed through FESEM analysis which depicts the grain size of 90 nm of the hybrid materials and the solidity of the material = 0.98. The direct band gap of 3.09eV has been calculated from the UV-Vis absorption spectrum which indicates that the hybrid material has potential band gap transitions and hence can be used in optical energy storage devices.An inorganic-organic hybrid material of cadmium chloride and phenol red has been prepared by solution growth through slow cooling process. The hybrid material was studied through powder XRD pattern which shows that the material has been grown in monoclinic space group P21 with the cell parameters of a = 6.231, b = 4.873, c = 3.412 and b = 93.85o. The surface functionality has been performed through FESEM analysis which depicts the grain size of 90 nm of the hybrid materials and the solidity of the material = 0.98. The direct band gap of 3.09eV has been calculated from the UV-Vis absorption spectrum which indicates that the hybrid material has potential band gap transitions and hence can be used in optical energy storage devices.
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