用于光纤通信的单片集成激光DHBT OEICs

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147402

E. Kuhn, C. Hache, D. Kaiser, G. Laube, P. Speier, F. Tegude, K. Wunstel

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引用次数: 3

摘要

讨论了用InP/InGaAs(P)实现1.3 μ m半绝缘埋置异质结构(SI-BH)激光器与双异质结构双极晶体管(DHBT)的单片集成。该集成基于具有横向生长SI-InP电流阻断层的SI-BH激光器和具有底层SI-InP的可逆DHBT。对于SI-InP和dhbt层的生长过程，采用了选择性的、平面化的金属有机气相外延(MOVPE)工艺。对于非优化的器件，已经证明了高达600 Mb/s的大信号操作和每个面5 mW的光功率。给出了发射机的直流和射频特性

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Monolithic integrated laser DHBT OEICs for optical fibre communication

The monolithic integration of a double heterostructure bipolar transistor (DHBT) with a 1.3- mu m semi-insulating buried heterostructure (SI-BH) laser realized with InP/InGaAs(P) is discussed. The integration is based on a SI-BH laser with laterally grown SI-InP current blocking layers and an invertible DHBT with underlying SI-InP. For the growth process of the SI-InP as well as the DHBT-layers, a selective, planarizing metalorganic vapor-phase epitaxy (MOVPE) process is used. For nonoptimized devices, large signal operation up to 600 Mb/s and 5 mW optical power per facet has been demonstrated. The DC and RF characteristics of the transmitter are presented.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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