一种低损耗单极双掷开关电路

TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference Pub Date : 2007-06-10 DOI:10.1109/SENSOR.2007.4300221

M. Tang, A. Liu, A. Agarwal

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引用次数: 6

摘要

在玻璃上开发了一种低损耗单极双掷(SPDT)开关电路，该电路使用横向RF MEMS开关，工作范围为直流至20 GHz。采用横向开关和共面波导(CPW)结构可以获得高紧凑性和低损耗。该电路提供> 24 db的隔离和< 0.9 db的插入损耗，最高可达20 GHz。开关的拉入电压仅为12.4 V，接通时间为35 μ s，断开时间为36 μ s。提出了一种单掩模玻璃上硅(SiOG)制造工艺，该工艺具有低损耗、高成品率的优点。整个电路的尺寸为1.64 mm × 1.3 mm。

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A Low-Loss Single-Pole-Double-Throw (SPDT) Switch Circuit

A low-loss single-pole-double-throw (SPDT) switch circuit using lateral RF MEMS switches has been developed on glass to operate from DC to 20 GHz. High compactness and low loss can be obtained by use of the lateral switches and coplanar waveguide (CPW) configuration. The circuit provides > 24-dB isolation and < 0.9-dB insertion loss up to 20 GHz. The pull-in voltage of the switch is only 12.4 V, with a switching-on time of 35 mus and a switching-off time of 36 mus. A single-mask silicon-on-glass (SiOG) fabrication process has been developed to fabricate the SPDT switch circuit on glass, which has the advantages of low loss and high yield. The whole circuit has a size of 1.64 mm times 1.3 mm.

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来源期刊

TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference

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