S. Cushing, Lucas M. Carneiro, M. Zürch, P. Kraus, Christopher J. Kaplan, Hung-Tzu Chang, S. Leone
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Valley-dependent carrier and lattice dynamics in silicon measured by transient XUV spectroscopy
Transient XUV core level spectroscopy is used to resolve photoexcited electron and hole distributions, as well as carrier-phonon and phonon-phonon scattering times, in the γ, L, and X valleys of silicon.
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