采用热氧化和TMAH湿法蚀刻的cmos兼容增强型GaN-on-Si MOS-HEMT具有高击穿电压(930V)

2015 IEEE Energy Conversion Congress and Exposition (ECCE) Pub Date : 2015-10-29 DOI:10.1109/ECCE.2015.7309715

C. Tang, Mingchen Hou, Xueyang Li, G. Xie, Kuang Sheng

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引用次数: 5

摘要

在本文中，我们首次报道了一种增强模式(E-mode) Al2O3/GaN金属氧化物半导体高电子迁移率晶体管(MOS-HEMT)，该晶体管采用与cmos兼容的技术，包括栅极区局部热氧化和有机碱性溶液(TMAH)湿法蚀刻。制备的MOS-HEMT具有+2.5 V的高正阈值电压，表明二维电子气(2DEG)通道完全掐断。对于LG = 2.0 μm和LGD = 14 μm的器件，观察到最大漏极电流为250 mA/mm，在0 V栅极偏置下的断态击穿电压高达930 V，表明了一种低成本、高可重复的CMOS兼容的GaN-on-Si器件的正常关断制造方法，用于电力电子应用。

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CMOS-compatible ehancement-mode GaN-on-Si MOS-HEMT with high breakdown voltage (930V) using thermal oxidation and TMAH wet etching

In this paper, we report for the first time, an enhancement-mode (E-mode) Al2O3/GaN metal-oxide-semiconductor high-electron-mobility-transistor (MOS-HEMT) using CMOS-compatible techniques including gate region local thermal oxidation and organic alkaline solution (TMAH) wet etching. The fabricated MOS-HEMT exhibits a high positive threshold voltage of +2.5 V, indicating complete pinch-off of the 2 dimensional electron gas (2DEG) channel. Maximum drain current of 250 mA/mm and an off-state breakdown voltage up to 930 V at a 0 V gate bias are observed for the fabricated device of LG = 2.0 μm and LGD = 14 μm, manifesting a low cost, highly repeatable CMOS compatible fabrication method of normally-off GaN-on-Si devices for power electronics applications.

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2015 IEEE Energy Conversion Congress and Exposition (ECCE)

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