通过线条粗糙度提取的纳米压印监视器的重复性

H. Teyssèdre, F. Delachat, Jonas Khan, J. Reche, Manuela Stirner, Peter Ledel
{"title":"通过线条粗糙度提取的纳米压印监视器的重复性","authors":"H. Teyssèdre, F. Delachat, Jonas Khan, J. Reche, Manuela Stirner, Peter Ledel","doi":"10.1109/ASMC49169.2020.9185377","DOIUrl":null,"url":null,"abstract":"In twenty years, consequent technical developments have been achieved to make the soft stamp nano imprint lithography (NIL technology mature for high volume production [1]. Today the up to date technology and materials from EVG have shown high repeatability and uniformity in term of critical dimension (CD) and advanced rules-based have been proposed [2],[3]. Based on this progress, this paper will focus on line width roughness (LWR) and line edge roughness (LER) extraction as a new metric to monitor quality of imprint. Evolution of these metrics are studied to provide information on stability of the imprint process.","PeriodicalId":6771,"journal":{"name":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"100 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Repeatability of Nanoimprint Lithography Monitor Through Line Roughness Extraction\",\"authors\":\"H. Teyssèdre, F. Delachat, Jonas Khan, J. Reche, Manuela Stirner, Peter Ledel\",\"doi\":\"10.1109/ASMC49169.2020.9185377\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In twenty years, consequent technical developments have been achieved to make the soft stamp nano imprint lithography (NIL technology mature for high volume production [1]. Today the up to date technology and materials from EVG have shown high repeatability and uniformity in term of critical dimension (CD) and advanced rules-based have been proposed [2],[3]. Based on this progress, this paper will focus on line width roughness (LWR) and line edge roughness (LER) extraction as a new metric to monitor quality of imprint. Evolution of these metrics are studied to provide information on stability of the imprint process.\",\"PeriodicalId\":6771,\"journal\":{\"name\":\"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)\",\"volume\":\"100 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASMC49169.2020.9185377\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC49169.2020.9185377","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

二十年来,随之而来的技术发展使得软印纳米压印技术(NIL)成熟到可以大批量生产[1]。如今,EVG的最新技术和材料在关键尺寸(CD)方面显示出高度的重复性和均匀性,并提出了先进的基于规则的方法[2],[3]。在此基础上,本文将重点研究线条宽度粗糙度(LWR)和线条边缘粗糙度(LER)提取作为一种新的印痕质量监测指标。研究了这些指标的演变,以提供压印工艺稳定性的信息。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Repeatability of Nanoimprint Lithography Monitor Through Line Roughness Extraction
In twenty years, consequent technical developments have been achieved to make the soft stamp nano imprint lithography (NIL technology mature for high volume production [1]. Today the up to date technology and materials from EVG have shown high repeatability and uniformity in term of critical dimension (CD) and advanced rules-based have been proposed [2],[3]. Based on this progress, this paper will focus on line width roughness (LWR) and line edge roughness (LER) extraction as a new metric to monitor quality of imprint. Evolution of these metrics are studied to provide information on stability of the imprint process.
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