单壁碳纳米管对有机器件界面性能的修饰

Q3 Engineering

International Journal of Computational Materials Science and Surface Engineering Pub Date : 2022-01-01 DOI:10.52687/2348-8956/915

Sudipta Sen, Pallabi Das, N. Manik

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引用次数: 0

摘要

计算了无碳纳米管和有碳纳米管时的肖特基势垒和空间电荷区宽度对器件性能有显著影响。玫瑰孟加拉染料被夹在氧化铟锡(ITO)涂层玻璃基片和铝之间。肖特基势垒是通过稳态电流来估计的，也被认为是计算外加电场存在时的有效势垒。空间-电荷区宽度与肖特都是相关的，可以推断，通过加入swcnts，肖特基势垒和空间将改善电流的流动。在swcnts的存在下，电流的改善也可以归因于陷阱能量的降低，这也是在这项工作中确定的。设备的接口特性对设备的性能影响很大。在这项工作中，估计了没有和有swcnts的电荷区域。玫瑰孟加拉染料被夹在氧化铟锡(ITO)涂层玻璃基片和铝之间。通过阅读稳态电流电压图来模拟。为了计算外加电场作用下的有效势垒，还考虑了像垒降低效应。电荷区宽度与肖特基势垒和外加电场有关。可以推断，加入swcnts可以减小肖特基势垒和空间电荷区宽度，从而改善电流流动。在swcnts的存在下，电流的改善也可以归因于陷阱能量的降低，这也是在这项工作中确定的。考虑了在存在电势垒和外加电场的情况下计算有效势垒。它可以减小电荷区宽度，从而改善电流。在swcnts的存在下，电流的改善也可以归因于此

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Modification of Interfacial Properties of Organic Device in Presence of Single Walled Carbon Nanotubes

Device performance gets significantly affected by the interfacial properties Schottky barrier and width of space – charge region have been estimated without and with SWCNT. Rose Bengal dye has been sandwiched in between Indium Tin Oxide (ITO) coated glass substrate and Aluminium. Schottky barrier is estimated by perusing steady state current has also been considered to calculate the effective barrier in presence of externally applied electric field. Space- charge region width is interrelated to the both Schot be inferred that by incorporating SWCNT, schottky barrier and space which will improve the current flow. Current flow improvement in presence of SWCNT can also be ascribed to the lowering of energy of traps which has also been determined in this work. Device performance gets significantly affected by the interfacial properties of the device. In this work, charge region have been estimated without and with SWCNT. Rose Bengal dye has been sandwiched in between Indium Tin Oxide (ITO) coated glass substrate and Aluminium. imated by perusing steady state current – voltage plot. Image barrier lowering effect has also been considered to calculate the effective barrier in presence of externally applied electric field. charge region width is interrelated to the both Schottky barrier and the applied electric field. It can be inferred that by incorporating SWCNT, schottky barrier and space- charge region width get reduced which will improve the current flow. Current flow improvement in presence of SWCNT can also be ascribed to the lowering of energy of traps which has also been determined in this work. considered to calculate the effective barrier in presence of electric tky barrier and the applied electric field. It can charge region width get reduced which will improve the current flow. Current flow improvement in presence of SWCNT can also be ascribed

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来源期刊

International Journal of Computational Materials Science and Surface Engineering Engineering-Engineering (all)

CiteScore

1.20

自引率

0.00%

发文量

期刊介绍： IJCMSSE is a refereed international journal that aims to provide a blend of theoretical and applied study of computational materials science and surface engineering. The scope of IJCMSSE original scientific papers that describe computer methods of modelling, simulation, and prediction for designing materials and structures at all length scales. The Editors-in-Chief of IJCMSSE encourage the submission of fundamental and interdisciplinary contributions on materials science and engineering, surface engineering and computational methods of modelling, simulation, and prediction. Papers published in IJCMSSE involve the solution of current problems, in which it is necessary to apply computational materials science and surface engineering methods for solving relevant engineering problems.