石墨烯纳米场效应管的高稳定化学n掺杂

The 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) Pub Date : 2014-04-13 DOI:10.1109/NEMS.2014.6908762

H. Al-Mumen, Lixin Dong, Wen Li

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引用次数: 2

摘要

具有长期空气稳定性的n型掺杂石墨烯是石墨烯电子学实际应用的重大挑战。本文报道了一种可逆掺杂方法，该方法使用SU-8光刻胶作为掺杂和封装材料，使石墨烯具有高度空气稳定的n型半导体特性。SU-8抗蚀剂同时作为有效的电子掺杂剂、介电介质和优良的封装层。通过拉曼光谱和输运性质验证了掺as石墨烯的空气稳定n型特性。SU-8掺杂对石墨烯六边形晶格的破坏最小，并且可以通过去除未交联的SU-8抗蚀剂来逆转。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Highly stable chemical N-doping of graphene nanomesh FET

N-type doping of graphene with long-term air stability represents a significant challenge for practical application of graphene electronics. This paper reports a reversible doping method that uses SU-8 photoresist as a doping and encapsulating material to enable highly air-stable n-type semiconducting properties of graphene. The SU-8 resist simultaneously serves as an effective electron dopant, a dielectric medium, and an excellent encapsulating layer. The air-stable n-type characteristics of the as-doped graphene were verified by Raman spectra and transport properties. The SU-8 doping has minimum damage to the hexagonal lattice of graphene and can be reversed by removing the uncrosslinked SU-8 resist.

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The 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

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