Tb和Mn共掺铋铁氧体嵌入聚乙烯醇纳米复合膜的电输运性质

DAE SOLID STATE PHYSICS SYMPOSIUM 2018 Pub Date : 2019-07-12 DOI:10.1063/1.5113268

Monalisa Halder, A. Meikap

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引用次数: 1

摘要

采用溶胶-凝胶法制备了Tb和Mn共掺杂铋铁氧体(BTFMO)纳米颗粒，晶粒尺寸为45 nm, BTFMO- PVA纳米复合膜质量分数为2.0 wt%。Williamson-Hall分析发现应变为0.4%。形态学研究表明，BTFMO纳米填料在聚乙烯醇基体中分布均匀。修正的Cole-Cole模型能很好地拟合室温以上薄膜样品的介电响应随温度的变化。观察到非德拜型不对称行为。弛豫时间随温度的升高而减小。在±50 V电压下对薄膜的电流电压研究显示出温度相关的整流性质，表明形成了势垒高度为0.94eV的背对背肖特基势垒二极管(SBD)。采用溶胶-凝胶法制备了Tb和Mn共掺杂铋铁氧体(BTFMO)纳米颗粒，晶粒尺寸为45 nm, BTFMO- PVA纳米复合膜质量分数为2.0 wt%。Williamson-Hall分析发现应变为0.4%。形态学研究表明，BTFMO纳米填料在聚乙烯醇基体中分布均匀。修正的Cole-Cole模型能很好地拟合室温以上薄膜样品的介电响应随温度的变化。观察到非德拜型不对称行为。弛豫时间随温度的升高而减小。在±50 V电压下对薄膜的电流电压研究显示出温度相关的整流性质，表明形成了势垒高度为0.94eV的背对背肖特基势垒二极管(SBD)。

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Electrical transport properties of Tb and Mn codoped bismuth ferrite embedded poly (vinyl alcohol) nanocomposite film

Tb and Mn codoped Bismuth Ferrite (BTFMO) nanoparticles of crystallite size 45 nm and 2.0 wt% BTFMO- PVA nanocomposite film are synthesized by sol gel method. From Williamson-Hall analysis, strain is found to be 0.4%. Morphological Study reveals the uniform dispersion of BTFMO nanofillers in the PVA matrix. Modified Cole-Cole model is well-fitted with the experimentally observed temperature dependent dielectric response of the film sample above room temperature. A non-Debye type asymmetric behavior is observed. Relaxation time tends to decrease with increasing temperature. Current-voltage study of the film under ±50 V applied voltage exhibits temperature dependent rectifying nature indicating the formation of back to back Schottky Barrier Diode (SBD) with barrier height 0.94eV.Tb and Mn codoped Bismuth Ferrite (BTFMO) nanoparticles of crystallite size 45 nm and 2.0 wt% BTFMO- PVA nanocomposite film are synthesized by sol gel method. From Williamson-Hall analysis, strain is found to be 0.4%. Morphological Study reveals the uniform dispersion of BTFMO nanofillers in the PVA matrix. Modified Cole-Cole model is well-fitted with the experimentally observed temperature dependent dielectric response of the film sample above room temperature. A non-Debye type asymmetric behavior is observed. Relaxation time tends to decrease with increasing temperature. Current-voltage study of the film under ±50 V applied voltage exhibits temperature dependent rectifying nature indicating the formation of back to back Schottky Barrier Diode (SBD) with barrier height 0.94eV.

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DAE SOLID STATE PHYSICS SYMPOSIUM 2018

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