使用ITO肖特基电极的GaN MSM光电探测器的UV-A选择性光响应性

2011 IEEE International Conference of Electron Devices and Solid-State Circuits Pub Date : 2011-12-29 DOI:10.1109/EDSSC.2011.6117620

Chang-Ju Lee, Gyo-hun Koo, Dong‐Seok Kim, J. Yun, Jung-Hee Lee, S. Hahm

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引用次数: 0

摘要

研究了AlGaN缓冲层对金属-半导体-金属(MSM)紫外探测器(pd)光响应特性的影响。在AlGaN缓冲层PD样品中，在365 nm时，在5 V时的峰值光电流为4.5µA，在1 V时的暗电流为4 pA。在1 V下，AlGaN缓冲液样品的紫外/可见光抑制比大于104,HT-GaN/LT-AlN样品的紫外/可见光抑制比大于102。我们在360 ~ 370 nm范围内观察到UV-A选择性(或带通样)响应行为。

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UV-A selective photo-responsivity in a GaN MSM photodetector using ITO schottky electrodes

We examined the AlGaN buffer layer dependent photo-response characteristics of the metal-semiconductor-metal (MSM) UV photodetectors (PDs). In the AlGaN buffer layer PD sample, the peak photo-current was of 4.5 µA at 5 V for 365 nm and dark current level ws 4 pA at 1 V. The UV/visible rejection ratio of AlGaN buffer sample was higher than 104 and HT-GaN/LT-AlN sample was 102 at 1 V, respectively. We observed a UV-A selective (or band-pass-like) response behavior near the 360∼370 nm range.

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2011 IEEE International Conference of Electron Devices and Solid-State Circuits

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