下游PECVD在In/sub 0.53/Ga/sub 0.47/As上形成硅层

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147438

V. Montgomery, D.G. Kimpton, J. Swanson

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引用次数: 0

摘要

利用下游等离子体增强化学气相沉积(PECVD)技术制备了In/sub 0.53/Ga/sub 0.47/As (IGA)-SiO/sub 2/界面，避免了半导体表面暴露在激发等离子体的轰击下。n型和p型In/sub 0.53/Ga/sub 0.47/As与下游PECVD制备的SiO/sub 2/接触后的自然状态为电子积累。在n型材料中，空穴积累是在负绝缘子场下实现的，但对于p-MIS结构，费米能级钉住发生在距价带边缘0.41 eV处。无法形成孔洞堆积。p型表面的静态电子积累状态导致用该材料钝化的结的表面泄漏。

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Silica layers formed on In/sub 0.53/Ga/sub 0.47/As by downstream PECVD

In/sub 0.53/Ga/sub 0.47/As (IGA)-SiO/sub 2/ interfaces are prepared by downstream plasma-enhanced chemical-vapor deposition (PECVD), which avoids exposing the semiconductor surface to the bombardment of the exciting plasma. The natural state of n- and p-type In/sub 0.53/Ga/sub 0.47/As in contact with SiO/sub 2/ prepared by downstream PECVD is electron accumulation. In the case of n-type material, hole accumulation is achieved with negative insulator fields, but for p-MIS structures, Fermi level pinning occurs at 0.41 eV from the valence band edge. Hole accumulation could not be established. The quiescent electron accumulated state of the p-type surface causes surface leakage in junctions that are passivated with this material.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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