贝叶斯神经网络在基于电阻记忆的推理硬件上的非原位转移

T. Dalgaty, E. Esmanhotto, N. Castellani, D. Querlioz, E. Vianello
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引用次数: 17

摘要

由于严重的能量限制,神经网络通常不能在边缘计算系统中进行局部训练。因此,对它们进行“非原位”训练并将结果模型转移到专用的推理硬件上已经变得司空见惯。电阻式存储阵列对于实现这种推理硬件是特别有意义的,因为它们提供了极低功耗的点积运算实现。然而,将高精度软件参数转移到电阻存储器的不精确和随机电导状态提出了重大挑战。本文提出贝叶斯神经网络更适合模型传递,因为器件电导状态等参数是由随机变量描述的。首先对贝叶斯神经网络进行非原位训练,然后将得到的软件模型通过单个编程步骤传输到由16384个电阻存储器组成的阵列中。在一个说明性分类任务中,观察到软件模型的迁移决策边界和预测不确定性得到了很好的保留。这项工作表明,基于电阻性记忆的贝叶斯神经网络是开发电阻性记忆兼容边缘推理硬件的一个有前途的方向。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ex Situ Transfer of Bayesian Neural Networks to Resistive Memory‐Based Inference Hardware
Neural networks cannot typically be trained locally in edge‐computing systems due to severe energy constraints. It has, therefore, become commonplace to train them “ex situ” and transfer the resulting model to a dedicated inference hardware. Resistive memory arrays are of particular interest for realizing such inference hardware, because they offer an extremely low‐power implementation of the dot‐product operation. However, the transfer of high‐precision software parameters to the imprecise and random conductance states of resistive memories poses significant challenges. Here, it is proposed that Bayesian neural networks can be more suitable for model transfer, because, such as device conductance states, their parameters are described by random variables. The ex situ training of a Bayesian neural network is performed, and then, the resulting software model is transferred in a single programming step to an array of 16 384 resistive memory devices. On an illustrative classification task, it is observed that the transferred decision boundaries and the prediction uncertainties of the software model are well preserved. This work demonstrates that resistive memory‐based Bayesian neural networks are a promising direction in the development of resistive memory compatible edge inference hardware.
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