{"title":"二氧化硅化学气相沉积动力学ⅰ:表面化学反应","authors":"Piotr B. Grabiec, Jan Przyłuski","doi":"10.1016/0376-4583(85)90082-2","DOIUrl":null,"url":null,"abstract":"<div><p>The process of SiO<sub>2</sub> deposition by oxidizing silane with oxygen is widely applied in manufacturing integrated circuits. However, its mechanism and kinetics are not fully understood. In this paper a general analysis of chemical vapour deposition of silicon dioxide is presented. In the first part, it is pointed out that in the case of low temperature SiO<sub>2</sub> deposition it is necessary to consider all process stages, <em>i.e.</em> diffusion, adsorption and chemical reactions. The electron structures of reagents are analysed. As a result of these studies a mechanism for the surface reactions is proposed.</p></div>","PeriodicalId":22037,"journal":{"name":"Surface Technology","volume":"25 4","pages":"Pages 307-313"},"PeriodicalIF":0.0000,"publicationDate":"1985-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0376-4583(85)90082-2","citationCount":"4","resultStr":"{\"title\":\"The kinetics of silicon dioxide chemical vapour deposition I: Surface chemical reactions\",\"authors\":\"Piotr B. Grabiec, Jan Przyłuski\",\"doi\":\"10.1016/0376-4583(85)90082-2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The process of SiO<sub>2</sub> deposition by oxidizing silane with oxygen is widely applied in manufacturing integrated circuits. However, its mechanism and kinetics are not fully understood. In this paper a general analysis of chemical vapour deposition of silicon dioxide is presented. In the first part, it is pointed out that in the case of low temperature SiO<sub>2</sub> deposition it is necessary to consider all process stages, <em>i.e.</em> diffusion, adsorption and chemical reactions. The electron structures of reagents are analysed. As a result of these studies a mechanism for the surface reactions is proposed.</p></div>\",\"PeriodicalId\":22037,\"journal\":{\"name\":\"Surface Technology\",\"volume\":\"25 4\",\"pages\":\"Pages 307-313\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1985-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/0376-4583(85)90082-2\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Surface Technology\",\"FirstCategoryId\":\"1087\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/0376458385900822\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Surface Technology","FirstCategoryId":"1087","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/0376458385900822","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The kinetics of silicon dioxide chemical vapour deposition I: Surface chemical reactions
The process of SiO2 deposition by oxidizing silane with oxygen is widely applied in manufacturing integrated circuits. However, its mechanism and kinetics are not fully understood. In this paper a general analysis of chemical vapour deposition of silicon dioxide is presented. In the first part, it is pointed out that in the case of low temperature SiO2 deposition it is necessary to consider all process stages, i.e. diffusion, adsorption and chemical reactions. The electron structures of reagents are analysed. As a result of these studies a mechanism for the surface reactions is proposed.
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