Ag/SiO2/Pt RRAM器件的多电平电阻开关特性

2011 IEEE International Conference of Electron Devices and Solid-State Circuits Pub Date : 2011-12-29 DOI:10.1109/EDSSC.2011.6117721

D. Yu, L. Liu, B. Chen, F. Zhang, B. Gao, Y. Fu, X. Liu, J. Kang, X. Zhang

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引用次数: 10

摘要

制备并研究了基于Ag/SiO2/ pt的阻性随机存取存储器(RRAM)器件。研究了Ag/SiO2/Pt器件在不同工作模式下的多电平电阻开关现象。具有四种电阻状态的RRAM器件具有良好的续航力和保持性能。讨论了多级RS的可能机理。

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Multilevel resistive switching characteristics in Ag/SiO2/Pt RRAM devices

Ag/SiO2/Pt-based resistive random access memory (RRAM) devices were fabricated and investigated. Multilevel resistive switching (RS) phenomenon was observed in Ag/SiO2/Pt devices under different operation modes. Good endurance and retention characteristics of RRAM device with four resistance states were achieved. The possible mechanism of multilevel RS was discussed.

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2011 IEEE International Conference of Electron Devices and Solid-State Circuits

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