一个功能齐全的90nm 8Mb STT MRAM演示器，具有修剪的参考细胞传感

2015 IEEE Custom Integrated Circuits Conference (CICC) Pub Date : 2015-11-30 DOI:10.1109/CICC.2015.7338359

J. DeBrosse, T. Maffitt, Yutaka Nakamura, G. Jan, P. Wang

{"title":"一个功能齐全的90nm 8Mb STT MRAM演示器，具有修剪的参考细胞传感","authors":"J. DeBrosse, T. Maffitt, Yutaka Nakamura, G. Jan, P. Wang","doi":"10.1109/CICC.2015.7338359","DOIUrl":null,"url":null,"abstract":"Spin Transfer Torque Magnetoresistive RAM (STT MRAM) has uniquely attractive write performance and endurance characteristics. Nonetheless, little STT MRAM circuit hardware data has been published [1-4]. This paper describes a fully-functional 90nm 8Mb STT MRAM, identifies and describes solutions to the primary circuit challenges, and includes considerable circuit hardware data.","PeriodicalId":6665,"journal":{"name":"2015 IEEE Custom Integrated Circuits Conference (CICC)","volume":"237 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A fully-functional 90nm 8Mb STT MRAM demonstrator featuring trimmed, reference cell-based sensing\",\"authors\":\"J. DeBrosse, T. Maffitt, Yutaka Nakamura, G. Jan, P. Wang\",\"doi\":\"10.1109/CICC.2015.7338359\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Spin Transfer Torque Magnetoresistive RAM (STT MRAM) has uniquely attractive write performance and endurance characteristics. Nonetheless, little STT MRAM circuit hardware data has been published [1-4]. This paper describes a fully-functional 90nm 8Mb STT MRAM, identifies and describes solutions to the primary circuit challenges, and includes considerable circuit hardware data.\",\"PeriodicalId\":6665,\"journal\":{\"name\":\"2015 IEEE Custom Integrated Circuits Conference (CICC)\",\"volume\":\"237 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-11-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE Custom Integrated Circuits Conference (CICC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.2015.7338359\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Custom Integrated Circuits Conference (CICC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2015.7338359","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

自旋传递转矩磁阻RAM (STT MRAM)具有独特的写入性能和持久性能。然而，很少有STT MRAM电路硬件数据发表[1-4]。本文描述了一个功能齐全的90nm 8Mb STT MRAM，确定并描述了主要电路挑战的解决方案，并包括大量的电路硬件数据。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A fully-functional 90nm 8Mb STT MRAM demonstrator featuring trimmed, reference cell-based sensing

Spin Transfer Torque Magnetoresistive RAM (STT MRAM) has uniquely attractive write performance and endurance characteristics. Nonetheless, little STT MRAM circuit hardware data has been published [1-4]. This paper describes a fully-functional 90nm 8Mb STT MRAM, identifies and describes solutions to the primary circuit challenges, and includes considerable circuit hardware data.

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2015 IEEE Custom Integrated Circuits Conference (CICC)

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