使用超薄硅界面控制层的钝化技术用于空气暴露的InGaAs表面

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Pub Date : 1991-04-08 DOI:10.1109/ICIPRM.1991.147454

H. Hasegawa, M. Akazawa, E. Ohue

{"title":"使用超薄硅界面控制层的钝化技术用于空气暴露的InGaAs表面","authors":"H. Hasegawa, M. Akazawa, E. Ohue","doi":"10.1109/ICIPRM.1991.147454","DOIUrl":null,"url":null,"abstract":"The growth of a surface passivation structure for In/sub 0.53/Ga/sub 0.47/As that utilizes an ultrathin molecular beam epitaxial (MBE) Si interface control layer (ICL) is discussed. The structure was realized by growing all the layers, including the MBE InGaAs layer, the MBE-Si ICL, and the outer photo-CVD SiO/sub 2/ layer, in a UHV-based system without air exposure. It is shown that by utilizing a suitable surface treatment technique prior to the growth of the Si ICL, the surface passivation technology becomes applicable to air-exposed InGaAs surfaces.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"101 1","pages":"630-633"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Passivation technology using an ultrathin Si interface control layer for air-exposed InGaAs surfaces\",\"authors\":\"H. Hasegawa, M. Akazawa, E. Ohue\",\"doi\":\"10.1109/ICIPRM.1991.147454\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The growth of a surface passivation structure for In/sub 0.53/Ga/sub 0.47/As that utilizes an ultrathin molecular beam epitaxial (MBE) Si interface control layer (ICL) is discussed. The structure was realized by growing all the layers, including the MBE InGaAs layer, the MBE-Si ICL, and the outer photo-CVD SiO/sub 2/ layer, in a UHV-based system without air exposure. It is shown that by utilizing a suitable surface treatment technique prior to the growth of the Si ICL, the surface passivation technology becomes applicable to air-exposed InGaAs surfaces.<<ETX>>\",\"PeriodicalId\":6444,\"journal\":{\"name\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"volume\":\"101 1\",\"pages\":\"630-633\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1991.147454\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147454","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

讨论了利用超薄分子束外延(MBE) Si界面控制层(ICL)的In/sub 0.53/Ga/sub 0.47/As表面钝化结构的生长。该结构是通过在基于uhv的系统中生长所有层来实现的，包括MBE InGaAs层、MBE- si ICL层和外部光- cvd SiO/sub 2/层。结果表明，通过在Si ICL生长之前采用合适的表面处理技术，表面钝化技术可以适用于空气暴露的InGaAs表面

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Passivation technology using an ultrathin Si interface control layer for air-exposed InGaAs surfaces

The growth of a surface passivation structure for In/sub 0.53/Ga/sub 0.47/As that utilizes an ultrathin molecular beam epitaxial (MBE) Si interface control layer (ICL) is discussed. The structure was realized by growing all the layers, including the MBE InGaAs layer, the MBE-Si ICL, and the outer photo-CVD SiO/sub 2/ layer, in a UHV-based system without air exposure. It is shown that by utilizing a suitable surface treatment technique prior to the growth of the Si ICL, the surface passivation technology becomes applicable to air-exposed InGaAs surfaces.<>

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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials

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